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A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Power density is greatly improved in gallium nitride devices compared to ... Read More

2023-02-17 11:02:58

Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface ... Read More

2024-10-29 11:49:57

10 X 10.5 Mm2 Free Standing GaN Substrates - 10 Μm ≤ BOW ≤ 10 Μm
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10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Applications Laser diodes: violet LD, blue LD, and green LD Power electronic devices, High ... Read More

2025-04-27 11:43:50

2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors ... Read More

2025-04-04 22:43:44

10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview We sell directly from the factory, and therefore can offer the best prices on the ... Read More

2025-04-27 11:43:51

5*10mm2 M-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.05 Ω·cm Power Device/Laser
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5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high... Read More

2025-04-04 22:43:38

10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm
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10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. ... Read More

2025-04-04 22:43:27

5*10mm2 SP-Face (10-11) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Device
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5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the potential to replace silicon as ... Read More

2025-04-04 22:43:36

5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Power density is greatly improved in gallium nitride devices compared to silicon ... Read More

2025-04-04 22:43:36

10*10.5mm2 GaN Single Crystal Substrate C Plane (0001) Off Angle Toward M-Axis 0.35 ±0.15°
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10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview The features are high crystalline, good uniformity, and superior surface quality. GaN ... Read More

2025-04-04 22:43:30

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