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2–6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device
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Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw ... Read More

2024-12-06 17:48:43

4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
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4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10 cm LED, laser, PIN epitaxial wafer The electrical properties of p-type Mg-doped GaN are investigated through variable-temperature Hall effect ... Read More

2025-04-04 22:43:49

2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:41:10

4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers
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Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing ... Read More

2024-12-06 17:33:43

4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers
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Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing ... Read More

2024-12-06 17:33:43

2 inch Free-standing SI-GaN Substrates
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two-dimension electron gas generated ... Read More

2024-10-14 17:06:30

4inch uGaN on silicon undoped gallium nitride on Silicon Epitaxial Wafer
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Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing ... Read More

2024-12-06 17:33:43

12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped
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(1- 100) 0.1o, 12.5 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Growth of ... Read More

2024-10-29 11:49:58

Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm
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Thickness 400 30 m 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview ... Read More

2024-10-29 11:49:57

Single Crystal Gan Epi Wafer Gallium Nitride Substrate 4 Inch
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Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material... Read More

2024-12-06 17:44:01

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

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2–6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device
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4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
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2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer
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4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers
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4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers
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2 inch Free-standing SI-GaN Substrates
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4inch uGaN on silicon undoped gallium nitride on Silicon Epitaxial Wafer
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12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped
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Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm
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Single Crystal Gan Epi Wafer Gallium Nitride Substrate 4 Inch
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP