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Home ProductsGaN Epitaxial Wafer

Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um

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Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um

Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um
Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um
Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um

Large Image :  Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDCD01-001-007
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 10000pcs/month
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Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um

Description
Dimensions: 5 X 10 Mm² Thickness: 350 ±25µm
TTV: ≤ 10µm BoW: - 10µm ≤ BOW ≤ 10µm
Macro Defect Density: 0cm⁻² Product Name: GaN Epitaxial Wafer
Highlight:

Single Crystal Semiconductor Wafer

,

TTV 10um epi wafer

,

Gallium Nitride Semiconductor Wafer

5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer

 


Overview
GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epitaxial growth has been achieved.

Laser diodes: violet LD, blue LD, and green LD
Power electronic devices, High frequency electronic devices

 

M face Free-standing GaN Substrates
Item

GaN-FS-M-U-S

 

GaN-FS-M-N-S

 

 GaN-FS-M-SI-S

 

 

 

 

 

 

 

 

Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um 0

 

 

Remarks:

A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.
Dimensions 5 x 10 mm2
Thickness 350 ±25 µm
Orientation

M plane (1- 100) off angle toward A-axis 0 ±0.5°

M plane (1- 100) off angle toward C-axis - 1 ±0.2°
Conduction Type N-type N-type Semi-Insulating
Resistivity (300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BOW - 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness

< 0.2 nm (polished)；

or < 0.3 nm (polished and surface treatment for epitaxy)
Back Surface Roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)
Dislocation Density From 1 x 105 to 3 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

 

Appendix: The diagram of miscut angle

Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um 1

 

 

If δ1= 0 ±0.5 degree, then M plane (1- 100) off angle toward A-Axis is 0 ±0.5 degree.

If δ2= - 1 ±0.2 degree, then M plane (1- 100) off angle toward C-Axis is - 1 ±0.2 degree.

 

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Tag:

Gallium Nitride Semiconductor Wafer,

Free Standing GaN Substrates,

Blue LED GaN Epitaxial Wafer

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

Send your inquiry directly to us (0 / 3000)

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