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GaN Epitaxial Wafer
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Rapid Thermal Annealing System
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Hall Effect Sensor Tester
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Ga2O3 Wafer
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gan epitaxial wafer online manufacture

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Front Surface Roughness GaN On Silicon Wafer GaN Substrate
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M Face Free-Standing GaN Substrates Front Surface Roughness < 0.2 Nm (Polished) Or < 0.3 nm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser ... Read More

2022-10-08 17:19:48

GaN Single Crystal Gallium Nitride Wafer SI Type
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5*10.5mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal ... Read More

2022-10-08 15:51:24

Un Doped N Type GaN Single Crystal Substrate 5x10mm2 M Face
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5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced ... Read More

2024-10-29 11:49:57

350 ±25µm Thickness Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm and Resistivity 0.1 Ω·cm
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single... Read More

2025-04-27 11:43:51

C Face GaN Substrate
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2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview GaN has excellent material characteristics for use in power devices, including a ... Read More

2022-10-09 17:03:25

Thickness 350 ±25 µm 10 X 10.5 mm2 Free-Standing GaN Substrates
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10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview GaN Substrates GaN (gallium nitride) substrates and wafers with high quality (low ... Read More

2025-04-04 22:43:28

TTV ≤ 10µm A-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.1 Ω·cm Power Device/Laser W
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconduc... Read More

2025-04-27 11:43:51

5x10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm Resistivity 0.05 Ω·cm
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5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview GaN has many serious advantages over silicon, being more power ... Read More

2025-04-27 11:43:51

SP-Face 11-12 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.05 Ω·cm Macro Defect Density 0cm⁻²
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Because GaN transistors are able to turn on faster than silicon ... Read More

2025-04-27 11:43:51

5*10mm2 SP-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 20-21 / 20-2-1 10mm2 Resistivity 0.05 Ω·cm
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview A generative adversarial network (GAN) has two parts: The ... Read More

2025-04-27 11:43:51

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