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GaN Epitaxial Wafer
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gan epitaxial wafer online manufacture

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Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um
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2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 1 mm 350 25 m 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN Breakdown Field ... Read More

2022-10-08 17:12:14

Un Doped GaN Epitaxial Wafer M Face Free Standing GaN Substrates
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5 X 10 mm2 M Face Free-Standing GaN Substrates 350 25 m TTV 10 m 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN substrate ... Read More

2023-02-17 10:52:50

5 X 10 mm2 M Face GaN Epitaxial Wafer Thickness 325um 375um
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5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 25 m 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview These GaN ... Read More

2024-11-18 19:17:19

A Face GaN Epitaxial Wafer Free Standing GaN Substrates
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5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 25 m 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Gallium Nitride (GaN) ... Read More

2023-02-17 10:57:06

Un Doped GaN Epitaxial Wafer
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10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is ... Read More

2022-10-09 17:04:59

M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It ... Read More

2022-10-08 17:04:46

5x10mm2 GaN Epitaxial Wafer Un Doped SI Type
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5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices ... Read More

2024-10-29 11:49:57

4 Inch N-Type Si-Doped GaN On Sapphire Wafer SSP Resistivity＜0.05 Ω cm LED, Laser, PIN Epitaxial Wafer
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4 inch N-type Si-doped GaN on sapphire wafer SSP resistivity0.05 cm LED, laser, PIN epitaxial wafer For lightly Si-doped GaN ([Si]=2.11016cm3), the room temperature (RT) electron mobility was as high as ... Read More

2025-04-04 22:42:55

4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
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4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10 cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers ... Read More

2025-04-04 22:43:47

Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:37:25

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