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GaN Epitaxial Wafer
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SiC Epitaxial Wafer
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GaAs Epi Wafer
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CVD Diamond Substrates
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Rapid Thermal Annealing System
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Hall Effect Sensor Tester
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Aluminum Nitride Wafer
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Laser Diode Chip
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Silicon Carbide Crystal
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Ga2O3 Wafer
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Silicon Wafer
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Sapphire Wafer
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Patterned Sapphire Substrates
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Wafer Holder
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Wafer Dicing Machine
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gan epitaxial wafer online manufacture

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AlGaN Buffer Thickness 600nm 2inch Blue-LED GaN On Silicon Wafer
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2inch Blue-LED GaN on silicon wafer There are three main substrates that are used with GaN - Silicon Carbide (SiC), Silicon (Si) and Diamond. GaN on SiC is the most common of the three and has been used in ... Read More

2025-04-04 22:42:47

4inch GaN On Sapphire Wafer Blue Green LED Wafer Flat Sapphire 100 mm
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4inch GaN-On-Sapphire Blue/Green LED Wafer Flat Sapphire 100 0.2 mm 4 inch Blue LED GaN epitaxial wafer on sapphire SSP The key ingredient for blue LEDs is gallium nitride, a robust material with a large energy ... Read More

2022-10-08 17:16:14

5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi... Read More

2025-04-04 22:43:31

Macro Defect Density 0cm⁻² Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate For RF Devices 5*10mm2 M-Face
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5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi... Read More

2025-04-27 11:43:51

5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶Ω·Cm RF Device
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5*10mm2 SP-face (11-12) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview The GaN semiconductor device market includes key companies such as Cree, ... Read More

2025-04-04 22:43:33

2 Inch GaN On Silicon HEMT Epi Wafer For Power Device
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:40:06

GaN Gallium Nitride Wafer Thickness 325um - 375um Freestanding
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5*10.5mm2 M Face Free-Standing GaN Substrates Thickness 350 25 m 5*10.5mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer The freestanding GaN substrate ... Read More

2022-10-08 17:00:13

2 Inch U GaN Substrates SI GaN Substrates 50.8mm
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2-inch Free-standing U-GaN/SI-GaN Substrates 350 25 m 50.8 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN Template on ... Read More

2024-10-14 17:06:30

GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)
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10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview We provide high-quality GaN substrates which are produced by originally designed HVPE ... Read More

2025-04-04 22:42:49

50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing
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50.8 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) 0.5o, 16 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN ... Read More

2022-10-08 17:22:16

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