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Silicon Carbide Crystal

China Silicon Carbide Crystal

Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm

Politype:4H

Diameter:100.0mm±0.5mm

Carrier Type:N-type
4H Politype Single Crystal Silicon Carbide 4" P Grade Si Face

Politype:4H

Diameter:100.0mm±0.5mm

Orientation:4.0°±0.2°
0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type

Carrier Type:N-type

Resistivity:0.015~0.028ohm.cm

Orientation:4.0°±0.2°
100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm

Politype:4H

Diameter:100.0mm±0.5mm

Carrier Type:N-type
100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H

Politype:4H

Diameter:100.0mm±0.5mm

Carrier Type:N-type
4" P Grade Silicon Carbide Crystal Resistivity 0.015ohm.cm To 0.028ohm.cm

Politype:4H

Carrier Type:N-type

Resistivity:0.015~0.028ohm.cm
JDZJ01-001-006 SiC Seed Crystal S Grade 6" Φ153±0.5mm

Warp(μm):≤50μm

Diameter:153±0.5mm

Main positioning edge lenght:8.0±2.0
JDZJ01-001-002 SiC Ingot Crystal 4" D Grade

Politype:4H

Diameter:100.0mm±0.5mm

Carrier Type:N-type
JDZJ01-001-008 4&6inch SiC Seed Crystal

Politype:4H

Diameter:105±0.5mm

Thickness:500±50μm
JDZJ01-001-007 Silicon Carbide Seed Crystal

Diameter:105±0.5mm

Carrier Type:500±50μm

TTV:≤15μm
JDZJ01-001-005 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm

Warp(μm):≤50μm

Diameter:153±0.5mm

Thickness:500±50mm
JDZJ01-001-004 SiC Ingot Crystal 6" P grade

Politype:4H

Diameter:150.0mm±0.5mm

Carrier Type:N-type

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GaN Epitaxial Wafer: 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing; Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices; 2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer: Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um; 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um; Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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