GaN Epitaxial Wafer

- 375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

Gallium Nitride Semiconductor Wafer 325um 375um C Plane

GaN Epitaxial Wafer

- SP Face 5 X 10mm2 Gallium Nitride Substrate 350um

Quality GaN Epitaxial Wafer & SiC Epitaxial Wafer factory

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

Dimensions: 50.8 ± 1 Mm

Thickness: 350 ±25µm

BoW: - 10µm ≤ BOW ≤ 10µm

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Gallium Nitride Semiconductor Wafer 325um 375um C Plane

Product Name: GaN Single Crystal Substrate

Dimensions: 50.8 ± 1 Mm

Thickness: 350 ±25µm

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GaN Single Crystal Gallium Nitride Wafer SI Type

Dimensions: 5 X 10mm²

Product Name: Free-standing GaN Substrates

Thickness: 350 ±25µm

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M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um

Product Name: GaN Substrate

Dimensions: 5 X 10.5mm²

Thickness: 350 ±25µm

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Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. ...

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Shanghai GaNova Electronic Information Co., Ltd. is a high-tech company devoting to developing technologies to fabricate high-quality nitride semiconductor materials. GaNova's key advantage is ...

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Address : Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai

Email : baixiwen2022@ganova.com.cn

China Shanghai GaNova Electronic Information Co., Ltd.

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GaN Epitaxial Wafer: 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing; Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices; 2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer: Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um; 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um; Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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