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gan epitaxial wafer online manufacture

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4 Inch 4H-SiC Substrate P-Level SI 500.0±25.0μM MPD≤0.3/Cm2 Resistivity≥1E9Ω·Cm For Power Microwave
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JDCD03-002-001 4inch 4H-SiC substrate P-level SI 500.025.0m MPD0.3/cm2 Resistivity1E9cm for power and microwave devices Overview SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can ... Read More

2025-04-27 11:43:50

Back Surface Roughness 0.8um to 1.2um Patterned Sapphire Substrates Width 16mm
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Back Surface Roughness 0.8~1.2m Patterned Sapphire Substrates Flat Edge Width 161.0mm 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material Patterned Sapphire Substrates (PSS) are micro-patterned ... Read More

2022-09-27 16:46:21

Flat Edge Angle 16mm Patterned Sapphire Substrates Front Surface
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Flat Edge Angle 161.0mm Patterned Sapphire Substrates Front Surface Roughness 0.25nm 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material Patterned Sapphire Substrates (PSS) are fabricated and used ... Read More

2022-10-09 10:43:37

Patterned 2inch Sapphire Substrates LED Chip Substrate 50.80mm
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2inch Patterned Sapphire Substrates,LED Chip,Substrate Material Patterned Sapphire Substrates (PSS) are fabricated and used in GaN-based LEDs in order to increase the internal quantum efficiency by reducing GaN ... Read More

2022-10-09 10:43:12

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