quality GaN Epitaxial Wafer & SiC Epitaxial Wafer factory

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quality Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices factory

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

Dimensions: 50.8 ± 1 Mm

Thickness: 350 ±25µm

BoW: - 10µm ≤ BOW ≤ 10µm

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quality Gallium Nitride Semiconductor Wafer 325um 375um C Plane factory

Gallium Nitride Semiconductor Wafer 325um 375um C Plane

Product Name: GaN Single Crystal Substrate

Dimensions: 50.8 ± 1 Mm

Thickness: 350 ±25µm

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quality GaN Single Crystal Gallium Nitride Wafer SI Type factory

GaN Single Crystal Gallium Nitride Wafer SI Type

Dimensions: 5 X 10mm²

Product Name: Free-standing GaN Substrates

Thickness: 350 ±25µm

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quality M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um factory

M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um

Product Name: GaN Substrate

Dimensions: 5 X 10.5mm²

Thickness: 350 ±25µm

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quality 5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate factory

5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate

Product Name: Free-Standing GaN Single Crystal Substrate

Dimensions: 5 X10mm²

Thickness: 350 ±25µm

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quality 10*10.5mm2 GaN Single Crystal Substrate C Plane (0001) Off Angle Toward M-Axis 0.35 ±0.15° factory

10*10.5mm2 GaN Single Crystal Substrate C Plane (0001) Off Angle Toward M-Axis 0.35 ±0.15°

Dimensions: 10 X 10.5mm²

Thickness: 350 ±25µm

Orientation: C Plane (0001) Off Angle Toward M-axis 0.35 ±0.15°

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quality 150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form factory

150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form

Diameter: 150.0mm +0mm/-0.2mm

Product Name: SiC Epitaxial Wafer

Surface Orientation: Off-Axis:4°toward <11-20>±0.5 °

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quality Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade factory

Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade

Product Name: Sic Epitaxial Wafer

Primary Flat Length: 47.5mm ± 1.5mm

Diameter: 150.0mm +0mm/-0.2mm

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quality 4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm factory

4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm

Product Name: SiC Epitaxial Wafer

Diameter: 150.0mm +0mm/-0.2mm

Surface Orientation: Off-Axis:4°toward <11-20>±0.5 °

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quality 150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm factory

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm

Product Name: Sic Epitaxial Wafer

Surface Orientation: Off-Axis:4°toward <11-20>±0.5 °

Primary Flat Length: 47.5mm ± 1.5mm

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quality 4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm factory

4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm

Product Name: SiC Epitaxial Wafer

Diameter: 150.0mm +0mm/-0.2mm

Surface Orientation: Off-Axis:4°toward <11-20>±0.5 °

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quality 150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm factory

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

Product Name: SiC Epitaxial Wafer

Diameter: 150.0mm +0mm/-0.2mm

Surface Orientation: Off-Axis:4°toward <11-20>±0.5 °

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China Shanghai GaNova Electronic Information Co., Ltd.
Who We Are
Introduction
Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has profound technological accumulation and rich customer resources in the semiconductor industry, and is committed to bringing value to the industrial chain through knowledge flow, technology flow and ...
QC Profile
Shanghai GaNova Electronic Information Co., Ltd. is a high-tech company devoting to developing technologies to fabricate high-quality nitride semiconductor materials.GaNova's key advantage is unrivaled materials expertise, and owns essential patents in GaN substrate and growth technologies.GaNova offers standard and customized free-standing GaN substrate and GaN/sapphire templates with extra low dislocations densities, which are suitable for applications in high-power LED, blue and green LD, ...
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Address :
Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
Worktime :
9:10-18:00 (Beijing time)
Business Phone :

+8613372109561(Work Time)

86-18962520616(Nonworking time)

China Shanghai GaNova Electronic Information Co., Ltd.
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