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AlGaN barrier 4 inch GaN on Silicon HEMT Epi wafer gallium nitride GaN-on-Si
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:33:44

6 Inch GaN On Silicon HEMT Epi Wafer Power Device Gallium Nitride GaN On Si
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:38:23

2inch GaN on Silicon Green LED Epi wafer Gallium Nitride on Silicon
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Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing ... Read More

2024-12-06 17:35:32

4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers
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Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing ... Read More

2024-12-06 17:33:43

4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers
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Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing ... Read More

2024-12-06 17:33:43

Surface Mount Standard Package Laser Diode Chip 1.0W/A
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Surface Mount Standard Package Laser Diode Chip 15-55 1.0W/A 915nm 10W COS Diode Laser Chip On Submount Design The Chip on Submount COS Laser Diode employing AuSn bonding and P Down package with multiple ... Read More

2022-09-22 15:13:00

SP Face 5 X 10mm2 Gallium Nitride Substrate 350um
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5 x 10mm2 Free-standing GaN Substrates 350 25 m From 1 x 105 to 3 x 106 cm-2 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer ... Read More

2022-10-08 16:41:01

Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface ... Read More

2024-10-29 11:49:57

2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:41:10

Flat Edge Angle 16mm Patterned Sapphire Substrates Front Surface
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Flat Edge Angle 161.0mm Patterned Sapphire Substrates Front Surface Roughness 0.25nm 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material Patterned Sapphire Substrates (PSS) are fabricated and used ... Read More

2022-10-09 10:43:37

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

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AlGaN barrier 4 inch GaN on Silicon HEMT Epi wafer gallium nitride GaN-on-Si
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6 Inch GaN On Silicon HEMT Epi Wafer Power Device Gallium Nitride GaN On Si
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2inch GaN on Silicon Green LED Epi wafer Gallium Nitride on Silicon
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4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers
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4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers
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Surface Mount Standard Package Laser Diode Chip 1.0W/A
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SP Face 5 X 10mm2 Gallium Nitride Substrate 350um
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Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um
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2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer
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Flat Edge Angle 16mm Patterned Sapphire Substrates Front Surface
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP