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5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi... Read More

2025-04-04 22:43:31

5*10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 0.1 Ω·cm Resistivity For Power Device
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5*10.5mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Generative adversarial networks (GANs) are algorithmic architectures that use ... Read More

2025-04-27 11:43:51

4 Inch N-Type UID-Doped GaN On Sapphire Wafer SSP Resistivity＞0.5 Ω cm LED, Laser, PIN Epitaxial Wafer
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4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity0.5 cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear ... Read More

2025-04-04 22:43:54

2–6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device
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Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw ... Read More

2024-12-06 17:48:43

50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing
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50.8 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) 0.5o, 16 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN ... Read More

2022-10-08 17:22:16

4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
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4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10 cm LED, laser, PIN epitaxial wafer The electrical properties of p-type Mg-doped GaN are investigated through variable-temperature Hall effect ... Read More

2025-04-04 22:43:49

Gallium Nitride Semiconductor Wafer 325um 375um C Plane
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2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, ... Read More

2024-10-29 11:49:57

Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:37:25

GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:35:32

2inch GaN on Silicon Blue LD Epi wafer GaN blue laser on silicon
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:35:32

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

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5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
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5*10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 0.1 Ω·cm Resistivity For Power Device
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4 Inch N-Type UID-Doped GaN On Sapphire Wafer SSP Resistivity＞0.5 Ω cm LED, Laser, PIN Epitaxial Wafer
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2–6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device
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50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing
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4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
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Gallium Nitride Semiconductor Wafer 325um 375um C Plane
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Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer
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GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer
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2inch GaN on Silicon Blue LD Epi wafer GaN blue laser on silicon
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP