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GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

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M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It ... Read More

2022-10-08 17:04:46

Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device Overview Since the 1990s, it has been used commonly in light emitting diodes (LED). Gallium ... Read More

2025-04-27 11:43:51

5*10mm2 SP-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 20-21 / 20-2-1 10mm2 Resistivity 0.05 Ω·cm
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview A generative adversarial network (GAN) has two parts: The ... Read More

2025-04-27 11:43:51

10 X 10.5 Mm2 Free Standing GaN Substrates - 10 Μm ≤ BOW ≤ 10 Μm
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10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Applications Laser diodes: violet LD, blue LD, and green LD Power electronic devices, High ... Read More

2025-04-27 11:43:50

GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)
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10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview We provide high-quality GaN substrates which are produced by originally designed HVPE ... Read More

2025-04-04 22:42:49

Un Doped GaN Epitaxial Wafer
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10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is ... Read More

2022-10-09 17:04:59

A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Power density is greatly improved in gallium nitride devices compared to ... Read More

2023-02-17 11:02:58

5x10mm2 GaN Epitaxial Wafer Un Doped SI Type
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5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices ... Read More

2024-10-29 11:49:57

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is ... Read More

2024-10-29 11:49:57

5*10mm2 M-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.05 Ω·cm Power Device/Laser
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5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high... Read More

2025-04-04 22:43:38

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

gan online manufacture

M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um
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Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm
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5*10mm2 SP-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 20-21 / 20-2-1 10mm2 Resistivity 0.05 Ω·cm
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10 X 10.5 Mm2 Free Standing GaN Substrates - 10 Μm ≤ BOW ≤ 10 Μm
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GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)
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Un Doped GaN Epitaxial Wafer
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A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped
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5x10mm2 GaN Epitaxial Wafer Un Doped SI Type
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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
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5*10mm2 M-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.05 Ω·cm Power Device/Laser
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP