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GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

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5*10mm2 SP-Face (10-11) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Device
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5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the potential to replace silicon as ... Read More

2025-04-04 22:43:36

C Face GaN Substrate
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2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview GaN has excellent material characteristics for use in power devices, including a ... Read More

2022-10-09 17:03:25

4inch GaN On Sapphire Wafer Blue Green LED Wafer Flat Sapphire 100 mm
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4inch GaN-On-Sapphire Blue/Green LED Wafer Flat Sapphire 100 0.2 mm 4 inch Blue LED GaN epitaxial wafer on sapphire SSP The key ingredient for blue LEDs is gallium nitride, a robust material with a large energy ... Read More

2022-10-08 17:16:14

2 Inch Green LED GaN On Silicon Wafer Dimension 520±10nm
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2inch Green-LED GaN on silicon wafer Overview Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. For decades, silicon-based MOSFETs (Metal Oxide Semiconductor Field ... Read More

2025-04-27 11:43:50

Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um
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2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 m (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser ... Read More

2022-10-08 17:14:45

GaN Single Crystal Gallium Nitride Wafer SI Type
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5*10.5mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal ... Read More

2022-10-08 15:51:24

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were ... Read More

2024-10-14 17:06:30

10*10.5mm2 GaN Single Crystal Substrate C Plane (0001) Off Angle Toward M-Axis 0.35 ±0.15°
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10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview The features are high crystalline, good uniformity, and superior surface quality. GaN ... Read More

2025-04-04 22:43:30

10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm
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10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. ... Read More

2025-04-04 22:43:27

5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Power density is greatly improved in gallium nitride devices compared to silicon ... Read More

2025-04-04 22:43:36

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

gan online manufacture

5*10mm2 SP-Face (10-11) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Device
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C Face GaN Substrate
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4inch GaN On Sapphire Wafer Blue Green LED Wafer Flat Sapphire 100 mm
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2 Inch Green LED GaN On Silicon Wafer Dimension 520±10nm
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Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um
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GaN Single Crystal Gallium Nitride Wafer SI Type
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2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
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10*10.5mm2 GaN Single Crystal Substrate C Plane (0001) Off Angle Toward M-Axis 0.35 ±0.15°
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10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP