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GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

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TTV ≤ 10µm A-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.1 Ω·cm Power Device/Laser W
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconduc... Read More

2025-04-27 11:43:51

GaN 2 Inch Gallium Nitride Single Crystal Substrate
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Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the ... Read More

2024-12-06 17:45:14

2 Inch GaN On Silicon HEMT Epi Wafer For Power Device
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:40:06

2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors ... Read More

2025-04-04 22:43:44

5x10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm Resistivity 0.05 Ω·cm
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5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview GaN has many serious advantages over silicon, being more power ... Read More

2025-04-27 11:43:51

Macro Defect Density 0cm⁻² Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate For RF Devices 5*10mm2 M-Face
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5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi... Read More

2025-04-27 11:43:51

5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶Ω·Cm RF Device
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5*10mm2 SP-face (11-12) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview The GaN semiconductor device market includes key companies such as Cree, ... Read More

2025-04-04 22:43:33

350 ±25µm Thickness Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm and Resistivity 0.1 Ω·cm
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single... Read More

2025-04-27 11:43:51

Single Crystal Gan Epi Wafer Gallium Nitride Substrate 4 Inch
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Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material... Read More

2024-12-06 17:44:01

4 Inch Fe Doped Freestanding GaN Substrate Gallium Nitride
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Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) ... Read More

2024-12-06 17:42:36

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

gan online manufacture

TTV ≤ 10µm A-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.1 Ω·cm Power Device/Laser W
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GaN 2 Inch Gallium Nitride Single Crystal Substrate
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2 Inch GaN On Silicon HEMT Epi Wafer For Power Device
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2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
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5x10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm Resistivity 0.05 Ω·cm
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Macro Defect Density 0cm⁻² Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate For RF Devices 5*10mm2 M-Face
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5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶Ω·Cm RF Device
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350 ±25µm Thickness Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm and Resistivity 0.1 Ω·cm
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Single Crystal Gan Epi Wafer Gallium Nitride Substrate 4 Inch
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4 Inch Fe Doped Freestanding GaN Substrate Gallium Nitride
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP