2 Inch Green LED GaN On Silicon Wafer Dimension 520±10nm

Name: 2 Inch Green LED GaN On Silicon Wafer Dimension 520±10nm
Brand: Shanghai GaNova Electronic Information Co., Ltd.
SKU: JDWY03-002-016
Price: 1,000.00 USD
Availability: InStock

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2 Inch Green LED GaN On Silicon Wafer Dimension 520±10nm

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Product Details:

Place of Origin:	Suzhou China
Brand Name:	GaNova
Certification:	UKAS/ISO9001:2015
Model Number:	JDWY03-002-016

Payment & Shipping Terms:

Packaging Details:	Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time:	3-4 week days
Payment Terms:	T/T
Supply Ability:	10000pcs/month

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2 Inch Green LED GaN On Silicon Wafer Dimension 520±10nm

Description

Product Name:	Green-LED GaN On Silicon Wafer	Size:	2 Inch 4 Inch
Substrate Structure:	20nmContact Layer/145nmpGaN/35nmAlGaN/~10nmGaN-QB/~3Si(111)substrates	Dimension:	520±10nm
Package:	Packaged In A Class 100 Clean Room Environment, In 25PCS Container, Under A Nitrogen Atmosphere	Brand:	GaNova
Highlight:	2 Inch GaN On Silicon Wafer , Green LED GaN On Silicon Wafer , 520nm GaN On Silicon Wafer

2inch Green-LED GaN on silicon wafer

Overview

Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. For decades, silicon-based MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) have been an integral part of the everyday modern world that helps convert energy to power.

Generative adversarial networks (GANs) are algorithmic architectures that use two neural networks, pitting one against the other (thus the “adversarial”) in order to generate new, synthetic instances of data that can pass for real data. They are used widely in image generation, video generation and voice generation.

2-4inch Green-LED GaN on silicon
Item Si(111) substrates		Al(Ga)N buffer	uGaN	nGaN	MQW(1-3 pairs)		AlGaN	pGaN	Contact layer
					InGaN-QW	GaN-QB
Dimensions		2 inch,4 inch
		520±10nm
Thickness		800nm	1000nm	3000nm	~3nm	~10nm	35nm	145nm	20nm
Composition	Al%	/	/	/	/	/	~15	/	/
	In%	/	/	/	~25	/	/	/	/
Doping	[Si]	/	/	8.0E+18	/	2.0E+17	/	/	/
	[Mg]	/	/	/	/	/	1.0E+20	3.0E+19	2.0E+20
Substrate Structure		20nmContact layer/145nmpGaN/35nmAlGaN/~10nmGaN-QB/~3Si(111)substrates
Package		Packaged in a class 100 clean room environment, in 25PCS container, under a nitrogen atmosphere

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

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Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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