Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm

Name: Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm
Brand: Shanghai GaNova Electronic Information Co., Ltd.
SKU: JDCD01-001-013
Price: 1,000.00 USD
Availability: InStock

All Products

GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

Best Products

GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

Certification

I'm Online Chat Now

Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm

Large Image : Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm

Product Details:

Place of Origin:	Suzhou China
Brand Name:	GaNova
Certification:	UKAS/ISO9001:2015
Model Number:	JDCD01-001-013

Payment & Shipping Terms:

Packaging Details:	Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time:	3-4 week days
Payment Terms:	T/T
Supply Ability:	10000pcs/month

Contact Now

Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm

Description

Dimensions:	5 X 10mm²	Orientation:	(11-22) Plane Off Angle Toward M-axis 0 ±0.5° (11-22) Plane Off Angle Toward C-axis - 1 ±0.2°
TTV:	≤ 10µm	BoW:	- 10µm ≤ BOW ≤ 10µm
Macro Defect Density:	0cm⁻²	Useable Area:	> 90% (edge Exclusion)
Product Name:	(11-22) Face Free-standing GaN Substrates	Dislocation Density:	From1 X10⁵ To 3 X 10⁶cm⁻²
Highlight:	0.1 Ω·cm GaN Single Crystal Substrate , 10µm GaN Single Crystal Substrate , 5x10mm2 GaN Single Crystal Substrate

5*10mm² SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device

Overview
Since the 1990s, it has been used commonly in light emitting diodes (LED). Gallium nitride gives off a blue light used for disc-reading in Blu-ray. Additionally, gallium nitride is used in semiconductor power devices, RF components, lasers, and photonics. In the future, we will see GaN in sensor technology.

(11-22) face Free-standing GaN Substrates
Item	GaN-FS-SP-U-S	GaN-FS-SP-N-S	GaN-FS-SP-SI-S	Remarks: A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.
Dimensions	5 x 10 mm²
Thickness	350 ±25 µm
Orientation	(11-22) plane off angle toward M-axis 0 ±0.5° (11-22) plane off angle toward C-axis - 1 ±0.2°
Conduction Type	N-type	N-type	Semi-Insulating
Resistivity (300K)	< 0.1 Ω·cm	< 0.05 Ω·cm	> 10⁶ Ω·cm
TTV	≤ 10 µm
BOW	- 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness	< 0.2 nm (polished); or < 0.3 nm (polished and surface treatment for epitaxy)
Back Surface Roughness	0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished)
Dislocation Density	From 1 x 10⁵ to 3 x 10⁶ cm^-2
Macro Defect Density	0 cm^-2
Useable Area	> 90% (edge exclusion)
Package	Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

Appendix: The diagram of miscut angle

Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm 1

If δ₁= 0 ±0.5°, then (11-22) plane off angle toward M-Axis is 0 ±0.5°.

If δ₂= - 1 ±0.2°, then (11-22) plane off angle toward C-Axis is - 1 ±0.2°.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Tag:

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

Other Products

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Dimensions: 50.8 ± 1 mm

Product Name: Free-standing GaN Substrates

Thickness: 350 ±25µm

Orientation: C plane (0001) off angle toward M-axis

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

Dimensions: 50.8 ± 1 mm

Thickness: 350 ±25µm

BoW: - 10µm ≤ BOW ≤ 10µm

Macro Defect Density: 0cm⁻²

2 inch Free-standing SI-GaN Substrates

Dimensions: 50.8 ± 1 mm

Thickness: 350 ±25µm

TTV: ≤ 10µm

BoW: ≤ 20 μm

Gallium Nitride Semiconductor Wafer 325um 375um C Plane

Product Name: GaN Single Crystal Substrate

Dimensions: 50.8 ± 1 mm

Thickness: 350 ±25µm

Orientation: C plane (0001) off angle toward M-axis

375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

Product Name: 2-inch Free-standing U-GaN/SI-GaN Substrates

Dimensions: 50.8 ± 1mm

Thickness: 350 ± 25μm

Orientation flat: (1-100) ± 0.5˚, 16 ± 1mm

Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm

Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm

0.1 Ω·cm GaN Single Crystal Substrate

10µm GaN Single Crystal Substrate

5x10mm2 GaN Single Crystal Substrate

Gallium Nitride Semiconductor Wafer,

Free Standing GaN Substrates,

Blue LED GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

Gallium Nitride Semiconductor Wafer 325um 375um C Plane

375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP