free standing gan substrates online manufacture

2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 1 mm 350 25 m 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN Breakdown Field ... Read More

5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device Overview Since the 1990s, it has been used commonly in light emitting diodes (LED). Gallium ... Read More

5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Because GaN transistors are able to turn on faster than silicon ... Read More

5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview A generative adversarial network (GAN) has two parts: The ... Read More

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is ... Read More

2-inch Free-standing U-GaN/SI-GaN Substrates 350 25 m 50.8 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN Template on ... Read More

50.8 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) 0.5o, 16 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN ... Read More

10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview We sell directly from the factory, and therefore can offer the best prices on the ... Read More

2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 m (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser ... Read More

2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview GaN has excellent material characteristics for use in power devices, including a ... Read More