free standing gan substrates online manufacture

10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.5nm Resistance 1.53E+18/cm-3 Optoelectronic devices, insulating layers of ... Read More

10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.3 nm Resistance Read More

10x10mm2 100(off 6) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra5nm Optoelectronic devices, insulating layers of semiconductor ... Read More

Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) ... Read More

M Face Free-Standing GaN Substrates Front Surface Roughness < 0.2 Nm (Polished) Or < 0.3 nm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser ... Read More

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were ... Read More

350 25 m (11-20) 3o, 8 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview The ... Read More

5*10.5mm2 M Face Free-Standing GaN Substrates Thickness 350 25 m 5*10.5mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer The freestanding GaN substrate ... Read More

Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material... Read More

5 x 10mm2 Free-standing GaN Substrates 350 25 m From 1 x 105 to 3 x 106 cm-2 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer ... Read More