free standing gan substrates online manufacture

5 X 10 mm2 M Face Free-Standing GaN Substrates 350 25 m TTV 10 m 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN substrate ... Read More

10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Applications Laser diodes: violet LD, blue LD, and green LD Power electronic devices, High ... Read More

10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview GaN Substrates GaN (gallium nitride) substrates and wafers with high quality (low ... Read More

5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 25 m 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Gallium Nitride (GaN) ... Read More

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two-dimension electron gas generated ... Read More

5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It ... Read More

10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview Premium quality GaN crystal substrates with low dislocation density (on the order of ... Read More

5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconduc... Read More

5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi... Read More

5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview GaN has many serious advantages over silicon, being more power ... Read More