free standing gan substrates online manufacture

5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Power density is greatly improved in gallium nitride devices compared to ... Read More

5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high... Read More

10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview We provide high-quality GaN substrates which are produced by originally designed HVPE ... Read More

5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the potential to replace silicon as ... Read More

5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Power density is greatly improved in gallium nitride devices compared to silicon ... Read More

5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single... Read More

5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi... Read More

5*10mm2 SP-face (11-12) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview The GaN semiconductor device market includes key companies such as Cree, ... Read More

5*10.5mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Generative adversarial networks (GANs) are algorithmic architectures that use ... Read More

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors ... Read More