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GaN Epitaxial Wafer

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GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

China GaN Epitaxial Wafer

Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP

Product Name:4inch GaN-on-Sapphire Blue/Green LED Wafer

Thickness:650 ± 25μm

Orientation:C plane (0001) off angle toward M-axis 0.2 ± 0.1°
Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um

Product Name:2-inch Free-standing N-GaN Substrates

Dimensions:50.0 ±0.3mm

Item:GaN-FS-C-N-C50-SSP
100mm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Thickness 5um - 6um

Type:Flat Sapphire

Product Name:4inch GaN-on-Sapphire Blue/Green LED Wafer

Polish:Single side polished (SSP) / Double side polished (DSP)
12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped

Product Name:2-inch Free-standing N-GaN Substrates

Dimensions:50.0 ±0.3mm

Thickness:400 ± 30μm
4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire

Type:Flat Sapphire

Product Name:4inch GaN-on-Sapphire Blue/Green LED Wafer

Polish:Single side polished (SSP) / Double side polished (DSP)
A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

Product Name:GaN single crystal substrate

Dimensions:5 x 10mm²

Thickness:350 ±25µm
5*10mm2 SP-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 20-21 / 20-2-1 10mm2 Resistivity 0.05 Ω·cm

Dimensions:5 x 10mm²

Thickness:350 ±25µm

TTV:≤ 10µm
350 ±25µm Thickness Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm and Resistivity 0.1 Ω·cm

Dimensions:5 x 10mm²

Thickness:350 ±25µm

TTV:≤ 10µm
SP-Face 11-12 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.05 Ω·cm Macro Defect Density 0cm⁻²

Dimensions:5 x 10mm²

Thickness:350 ±25µm

Orientation:(11-22) plane off angle toward M-axis 0 ±0.5° (11-22) plane off angle toward C-axis - 1 ±0.2°
Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm

Dimensions:5 x 10mm²

Orientation:(11-22) plane off angle toward M-axis 0 ±0.5° (11-22) plane off angle toward C-axis - 1 ±0.2°

TTV:≤ 10µm
5x10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm Resistivity 0.05 Ω·cm

Dimensions:5 x 10mm²

Thickness:350 ±25µm

TTV:≤ 10µm
5*10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 0.1 Ω·cm Resistivity For Power Device

Dimensions:5 x 10mm²

Thickness:350 ±25µm

Orientation:(10- 11) plane off angle toward A-axis 0 ±0.5° (10- 11) plane off angle toward C-axis - 1 ±0.2°

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GaN Epitaxial Wafer

GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

China GaN Epitaxial Wafer

Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP

Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um

100mm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Thickness 5um - 6um

12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped

4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire

A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

5*10mm2 SP-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 20-21 / 20-2-1 10mm2 Resistivity 0.05 Ω·cm

350 ±25µm Thickness Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm and Resistivity 0.1 Ω·cm

SP-Face 11-12 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.05 Ω·cm Macro Defect Density 0cm⁻²

Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm

5x10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm Resistivity 0.05 Ω·cm

5*10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 0.1 Ω·cm Resistivity For Power Device

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP