China GaN Epitaxial Wafer

Macro Defect Density 0cm⁻² Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate For RF Devices 5*10mm2 M-Face

Dimensions:5 x 10mm²

Thickness:350 ±25µm

BoW:- 10µm ≤ BOW ≤ 10µm
TTV ≤ 10µm A-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.1 Ω·cm Power Device/Laser W

Dimensions:5 x 10mm²

Thickness:350 ±25 µm

Orientation:A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis - 1 ±0.2°
10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer

Dimensions:10 x 10.5mm²

Thickness:350 ±25µm

TTV:≤ 10 µm
2 Inch Green LED GaN On Silicon Wafer Dimension 520±10nm

Product Name:Green-LED GaN on silicon wafer

Size:2 inch 4 inch

Substrate Structure:20nmContact layer/145nmpGaN/35nmAlGaN/~10nmGaN-QB/~3Si(111)substrates
10 X 10.5 Mm2 C Face Un Doped N Type Free Standing GaN Single Crystal Substrate

Product Name:GaN Single Crystal Substrate

Dimensions:10 x 10.5mm²

Thickness:350 ±25µm
10 X 10.5 Mm2 Free Standing GaN Substrates - 10 Μm ≤ BOW ≤ 10 Μm

Product Name:GaN Epitaxial Wafer

Dimensions:10 x 10.5mm²

Thickness:350 ±25µm
4 Inch N-Type UID-Doped GaN On Sapphire Wafer SSP Resistivity＞0.5 Ω cm LED, Laser, PIN Epitaxial Wafer

Dimensions:100 ± 0.2mm

Thickness/Thickness STD:4.5 ± 0.5μm / < 3%

Orientation:C plane (0001) off angle toward A-axis 0.2 ± 0.1 °
4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer

Dimensions:100 ± 0.2mm

Product Name:4-inch Mg-doped GaN/Sapphire Substrates

Conduction Type:P-type
4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer

Product Name:4-inch Mg-doped GaN/Sapphire Substrates

Dimensions:100 ± 0.2mm

Conduction Type:P-type
2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices

Dimensions:50.8 ± 1mm

Thickness:350 ± 25μm

Orientation flat:(1-100) ± 0.5˚, 16 ± 1mm
2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm

Product Name:Blue-LED GaN On Silicon Wafer

Dimensions:2 inch

AlGaN buffer Thickness:400-600nm
Dimension 520±10nm 2inch Green-LED GaN On Silicon Wafer 20nmContact Layer

Product Name:2-4inch Green-LED GaN on silicon

Size:2 inch, 4 inch

Dimension:520±10nm

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GaN Epitaxial Wafer

GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

China GaN Epitaxial Wafer

Macro Defect Density 0cm⁻² Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate For RF Devices 5*10mm2 M-Face

TTV ≤ 10µm A-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.1 Ω·cm Power Device/Laser W

10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer

2 Inch Green LED GaN On Silicon Wafer Dimension 520±10nm

10 X 10.5 Mm2 C Face Un Doped N Type Free Standing GaN Single Crystal Substrate

10 X 10.5 Mm2 Free Standing GaN Substrates - 10 Μm ≤ BOW ≤ 10 Μm

4 Inch N-Type UID-Doped GaN On Sapphire Wafer SSP Resistivity＞0.5 Ω cm LED, Laser, PIN Epitaxial Wafer

4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer

4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer

2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices

2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm

Dimension 520±10nm 2inch Green-LED GaN On Silicon Wafer 20nmContact Layer

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP