Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP

Name: Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP
Brand: Shanghai GaNova Electronic Information Co., Ltd.
SKU: JDWY03-001-031
Price: 1,000.00 USD
Availability: InStock

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Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP

Large Image : Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP

Product Details:

Place of Origin:	Suzhou China
Brand Name:	GaNova
Certification:	UKAS/ISO9001:2015
Model Number:	JDWY03-001-031

Payment & Shipping Terms:

Packaging Details:	Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time:	3-4 week days
Payment Terms:	T/T
Supply Ability:	10000pcs/month

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Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP

Description

Product Name:	4inch GaN-on-Sapphire Blue/Green LED Wafer	Thickness:	650 ± 25μm
Orientation:	C Plane (0001) Off Angle Toward M-axis 0.2 ± 0.1°	Type:	Flat Sapphire
Polish:	Single Side Polished (SSP) / Double Side Polished (DSP)	Dimension:	100 ± 0.2mm
Highlight:	Blue LED GaN Epitaxial Wafer , 4 Inch gan on sapphire substrate , Flat Sapphire GaN Epitaxial Wafer

Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP

4 inch Blue LED GaN epitaxial wafer on sapphire SSP

The operation principle of LEDs is based on the semiconductor PN-junction. A PN-junction in a semiconductor is interface between two semiconductor regions of different doping. p-side is doped with acceptor impurities such as Boron which have one less valence electron compared to the semiconductor valence shell and N-side is doped with donor impurities such as Phosphorus which have one extra electron on valence shell compared to the semiconductor.

4inch GaN-on-Sapphire Blue/Green LED Wafer
Substrate	Type	Flat Sapphire
	Polish	Single side polished (SSP) / Double side polished (DSP)
	Dimension	100 ± 0.2 mm
	Orientation	C plane (0001) off angle toward M-axis 0.2 ± 0.1°
	Thickness	650 ± 25 μm
Epilayer	Structure	0.2μm pGaN/0.5μm MQWs/2.5μm nGaN/2.0μm uGaN
	Thickness	5.5 ± 0.5μm
	Roughness (Ra)	<0.5 nm
	Dislocation density	< 5 × 10⁸ cm^-2
	Wavelength	Blue LED	Green LED
		465 ± 10 nm	525 ± 10 nm
	Wavelength FWHMs	< 25 nm	< 40 nm
Chip Performance	Cut-in voltage@1μA	2.3-2.5V	2.2-2.4V
Useable Area	> 90% (edge and macro defects exclusion)
Package	Packaged in a cleanroom in a single wafer container

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Tag:

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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