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GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

Certification

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p type silicon substrate online manufacture

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6 Inch GaN On Silicon HEMT Epi Wafer Power Device Gallium Nitride GaN On Si
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:38:23

A Plane Surface Orientation Sapphire Wafer Mirror Polished EPI Ready
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A-Plane(11-20) Surface Orientation Sapphire Wafer Front Surface Quality Mirror Polished,EPI-Ready JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430m, crystal orientation C/M0.2, OF length (mm) 16 ... Read More

2023-02-17 10:18:27

Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um
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2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 1 mm 350 25 m 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN Breakdown Field ... Read More

2022-10-08 17:12:14

50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing
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50.8 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) 0.5o, 16 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN ... Read More

2022-10-08 17:22:16

4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
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4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10 cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers ... Read More

2025-04-04 22:43:47

50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type
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High Purity Al2O399.995% R9 Mirror Polished EPI-Ready Wafer edge R-type JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430m, crystal orientation C/M0.2, OF length (mm) 16 LED chip,substrate ... Read More

2023-02-17 10:17:17

6inch SiC Epitaxial Wafer
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P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4toward 0.5 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0M MPD0.5/Cm2 Resistivity 0.015Cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type ... Read More

2022-10-09 16:56:20

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°
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47.5 mm 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to1 JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon ... Read More

2024-10-29 11:49:58

4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
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4H SiC Epitaxial Wafer 0.015cm0.025cm 4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha ... Read More

2024-10-29 11:49:58

2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer
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2024-12-06 17:41:10

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

p type silicon substrate online manufacture

6 Inch GaN On Silicon HEMT Epi Wafer Power Device Gallium Nitride GaN On Si
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A Plane Surface Orientation Sapphire Wafer Mirror Polished EPI Ready
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Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um
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50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing
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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
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50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type
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6inch SiC Epitaxial Wafer
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47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°
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4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
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2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP