Buy p type silicon substrate, Good quality p type silicon substrate manufacturer

TTV ≤ 10µm A-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.1 Ω·cm Power Device/Laser W
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconduc... Read More

2025-04-27 11:43:51

350 ±25µm Thickness Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm and Resistivity 0.1 Ω·cm
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single... Read More

2025-04-27 11:43:51

P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm
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P-Level SI-Type 6inch 4H-SiC Semi insulating substrate 350.025.0m MPD0.5/cm2 Resistivity1E9cm 6inch 4H-SiC substrate P-level SI-Type 350.025.0m MPD0.5/cm2 Resistivity1E9cm for power and microwave devices ... Read More

2022-10-24 10:21:46

2–6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device
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Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw ... Read More

2024-12-06 17:48:43

350um 4H SiC substrate
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015Cm0.025Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) is a non-oxide ceramic engineering ... Read More

2022-10-09 16:57:57

5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Power density is greatly improved in gallium nitride devices compared to silicon ... Read More

2025-04-04 22:43:36

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

p type silicon substrate online manufacture

TTV ≤ 10µm A-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.1 Ω·cm Power Device/Laser W
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350 ±25µm Thickness Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm and Resistivity 0.1 Ω·cm
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P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm
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2–6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device
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350um 4H SiC substrate
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser
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4H Politype Single Crystal Silicon Carbide 4" P Grade Si Face
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GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer
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2inch GaN on Silicon Blue LD Epi wafer GaN blue laser on silicon
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AlGaN barrier 4 inch GaN on Silicon HEMT Epi wafer gallium nitride GaN-on-Si
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP