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p type silicon substrate online manufacture

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buy A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip online manufacturer

A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip
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50mm Sapphire Substrate Wafer Thk 430m OF Length (Mm) 16 LED Chip JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430m, crystal orientation C/M0.2, OF length (mm) 16 LED chip,substrate material The ... Read More
2022-09-27 16:24:09
buy A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped online manufacturer

A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Power density is greatly improved in gallium nitride devices compared to ... Read More
2023-02-17 11:02:58
buy Thk 430um Sapphire Substrate Crystal Orientation C/M0.2 online manufacturer

Thk 430um Sapphire Substrate Crystal Orientation C/M0.2
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Thk 430m Sapphire Substrate Wafer Crystal Orientation C/M0.2, OF Length (Mm) 16 LED Chip JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430m, crystal orientation C/M0.2, OF length (mm) 16 LED chip... Read More
2023-02-17 10:18:05
buy M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um online manufacturer

M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It ... Read More
2022-10-08 17:04:46
buy Optoelectronics Polishing Sapphire Crystal Wafer R Type online manufacturer

Optoelectronics Polishing Sapphire Crystal Wafer R Type
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Thk 430m 50mm Sapphire Substrate Wafer Crystal Orientation C/M0.2, OF Length (Mm) 16 LED Chip JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430m, crystal orientation C/M0.2, OF length (mm) 16 LED ... Read More
2023-02-17 11:22:48
buy JDCD04-001-003 10x10mm2 100(Off 6°) Fe Doped Free Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing online manufacturer

JDCD04-001-003 10x10mm2 100(Off 6°) Fe Doped Free Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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10x10mm2 100(off 6) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra5nm Optoelectronic devices, insulating layers of semiconductor ... Read More
2025-04-27 11:43:51
buy 5x10mm2 GaN Epitaxial Wafer Un Doped SI Type online manufacturer

5x10mm2 GaN Epitaxial Wafer Un Doped SI Type
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5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices ... Read More
2024-10-29 11:49:57
buy Optical Communications Gallium Arsenide Substrate LEDs online manufacturer

Optical Communications Gallium Arsenide Substrate LEDs
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2inch GaAs (100) Undoped Substrates Overview Gallium arsenide is used in the manufacture of light-emitting diode s (LEDs), which are found in optical communications and control systems. Gallium arsenide can ... Read More
2022-10-09 09:53:08
buy 0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type online manufacturer

0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type
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0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.00.2 SiC Seed Crystal 4" PGrade SiC CRYSTAL is an ultra-high purity silicon carbide grain or powder, specially manufactured to achieve ... Read More
2022-09-27 17:01:16
buy 4&quot; P Grade Silicon Carbide Crystal Resistivity 0.015ohm.cm To 0.028ohm.cm online manufacturer

4" P Grade Silicon Carbide Crystal Resistivity 0.015ohm.cm To 0.028ohm.cm
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4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials... Read More
2022-09-27 17:35:24
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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