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50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type

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50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type

50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type
50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type

Large Image :  50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type

Product Details:
Model Number: JDCD08-001-001
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Payment Terms: T/T

50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type

Description
Diameter: 50.8 ±0.10 Surface Orientation: A-Plane(11-20)
Laser Mark: As Customer Required Wafer Edge: R-type
Material: High Purity Al₂O₃(>99.995%) Thickness: 430 ±15μm
Highlight:

50mm Sapphire Wafer

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Mirror Polished EPI Ready Wafer

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Sapphire Wafer R9

High Purity Al2O3>99.995% R9 Mirror Polished EPI-Ready Wafer edge R-type

JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430μm, crystal orientation C/M0.2, OF length (mm) 16 LED chip,substrate material

 

 

High performance of Silicon (Si) and Germanium (Ge)-based devices can be made possible through Sapphire Substrate, which allows chipsets to be very fast in performance. The presence of Si and Ge ensures high electron mobility and low twin defect density in the chipsets. Electron mobility in the SiGe devices is higher than in the case of Si devices.

 

Parameters

Specification
Unit Target Tolerance
Material High purity Al2O3(>99.995%)
Diameter mm 50.8 ±0.10
Thickness μm 430 ±15
Surface Orientation C-Plane(0001)
-Off Angle toward M-axis degree 0.20 ±0.10
-Off Angle toward A-axis degree 0.00 ±0.10
Flat Orientation A-Plane(11-20)
-Flat Off-set Angle degree 0.0 ±0.2
Flat Lenght mm 16.0 ±1
R-plane R9
Front surface Roughness(Ra) nm <0.3
Back surface Roughness μm 0.8~1.2μm
Front surface Quality Mirror Polished,EPI-Ready
Wafer edge R-type
Chamfer amplitude μm 80-160
Included angle radian between flat edge and round edge mm R=9
TTV μm ≤5
LTV(5x5mm) μm ≤1.5
Bow μm 0~-5
Warp μm ≤10
Laser mark   As customer required

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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