Home

China Shanghai GaNova Electronic Information Co., Ltd. sitemap

All Products

GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

Certification

I'm Online Chat Now

Company

About Us:

Company Profile
Company History
Company Service
Factory Tour
Quality Control
Contact Us

Products

GaN Epitaxial Wafer

Un Doped GaN Epitaxial Wafer M Face Free Standing GaN Substrates
GaN Gallium Nitride Wafer Thickness 325um - 375um Freestanding
5 X 10 mm2 M Face GaN Epitaxial Wafer Thickness 325um 375um
Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um

SiC Epitaxial Wafer

Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade
260μm Silicon Carbide Substrate P Level For Power Devices And Microwave Devices
150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form
P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm

Aluminum Nitride Wafer

JDWY01-001-006 2 Inch Thick Film (3,4)Um AIN On Sapphire Wafer,DSP,XRD FWHM Of(002)≤120arcsec(102) ≤450arcsec
JDWY01-001-004 2 inch thick film (2,3)um AIN on sapphire wafer,DSP,XRD FWHM of(002)≤100arcsec(102) ≤550arcsec
JDWY01-001-007 2 Inch Thick Film (4,5)Um AIN On Sapphire Wafer,SSP,XRD FWHM Of(002)≤160arcsec\(102) ≤400arcsec
1 Inch AlN Single Crystal wafer 400±50μM S/P/R Grade

Silicon Wafer

JDCD06-001-007 12-Inch Silicon Wafer MEMS Devices Integrated Circuits Dedicated Substrates For Discrete Devices
JDCD06-001-006 8-Inch Silicon Wafer MEMS Devices Integrated Circuits Dedicated Substrates For Discrete Devices
JDCD06-001-005 6-Inch Silicon Wafer MEMS Devices Integrated Circuits Dedicated Substrates For Discrete Devices
JDCD06-001-004 5-Inch Silicon Wafer MEMS Devices Integrated Circuits Dedicated Substrates For Discrete Devices

Sapphire Wafer

JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer
JDCD08-001-005 4inch R-Plane Sapphire Substrate Wafer
JDCD08-001-004 2inch R-Plane Sapphire Substrate Wafer

Page 5 of 17|< << 1 2 3 4 5 6 7 8 9 10 >> >|

Contact Details

Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

China Shanghai GaNova Electronic Information Co., Ltd. sitemap

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

GaN Epitaxial Wafer

SiC Epitaxial Wafer

Aluminum Nitride Wafer

Silicon Wafer

Sapphire Wafer

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP