sic epitaxial wafer c face online manufacture

5 x 10mm2 Free-standing GaN Substrates 350 25 m From 1 x 105 to 3 x 106 cm-2 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer ... Read More

6inch 4H-SiC substrate N-Type D Grade 350.025.0m MPD5/cm2 Resistivity 0.014cm0.028cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network solid. If we look at its structure, we ... Read More

P-Level SI-Type 6inch 4H-SiC Semi insulating substrate 350.025.0m MPD0.5/cm2 Resistivity1E9cm 6inch 4H-SiC substrate P-level SI-Type 350.025.0m MPD0.5/cm2 Resistivity1E9cm for power and microwave devices ... Read More