sic epitaxial wafer c face online manufacture

6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0c MPD0.5/cm2 Resistivity 0.015cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) are grown, machined into ingots, and ... Read More

4H-N/SI260m25m 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview We contribute to ... Read More

JDCD03-002-001 4inch 4H-SiC substrate P-level SI 500.025.0m MPD0.3/cm2 Resistivity1E9cm for power and microwave devices Overview SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can ... Read More

6inch 4H-SiC substrate D-level SI-Type 350.025.0m MPD5/cm2 Resistivity1E5cm for power and microwave devices Overview Sized for improved production With the 150 mm wafer size, we offer manufacturers the ability ... Read More

2-Inch SiC Substrate 150.0 mm +0mm/-0.2mm 47.5 mm 1.5 mm No Secondary Flat JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview Our relentless focus on ... Read More

JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.025.0m MPD5/cm2 Resistivity1E5cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices such as ... Read More

JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for ... Read More

4inch 4H-SiC substrate D-level N-Type 350.025.0m MPD5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview High Temperature Devices Because SiC has a high thermal conductivity, SiC dissipates ... Read More

6inch 4H-SiC substrate N-Type P-MOS Grade 350.025.0m MPD0.2/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices ... Read More

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors ... Read More