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GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

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p type silicon substrate online manufacture

(46)

JDZJ01-001-004 SiC Ingot Crystal 6" P grade
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SiC ingot crystal 6" Pgrade Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th century silicon carbide has ... Read More

2025-04-04 22:42:33

100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm
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100.0mm0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic ... Read More

2022-09-27 17:01:26

Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm
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Primary Flat Lengh 32.5mm2.0mm SiC Seed Crystal 4" P Grade 100.0mm0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than ... Read More

2022-09-27 17:01:05

6inch 4H SiC Substrate N Type P SBD Grade 350μm
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6inch 4H-SiC substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into ... Read More

2022-10-24 10:23:04

350um 4H SiC substrate
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015Cm0.025Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) is a non-oxide ceramic engineering ... Read More

2022-10-09 16:57:57

4H Politype Single Crystal Silicon Carbide 4" P Grade Si Face
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JDZJ01-001-001 SiC Seed Crystal 4" P Grade Si-Face 90Cw.From Primary Flat5 SiC Seed Crystal 4" PGrade The physical and electronic properties of SiC make it the foremost semiconductor material for short ... Read More

2022-09-27 17:01:35

4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
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4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10 cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers ... Read More

2025-04-04 22:43:47

6inch SiC Epitaxial Wafer
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P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4toward 0.5 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0M MPD0.5/Cm2 Resistivity 0.015Cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type ... Read More

2022-10-09 16:56:20

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°
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47.5 mm 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to1 JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon ... Read More

2024-10-29 11:49:58

4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
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4H SiC Epitaxial Wafer 0.015cm0.025cm 4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha ... Read More

2024-10-29 11:49:58

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

p type silicon substrate online manufacture

JDZJ01-001-004 SiC Ingot Crystal 6" P grade
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100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm
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Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm
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6inch 4H SiC Substrate N Type P SBD Grade 350μm
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350um 4H SiC substrate
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4H Politype Single Crystal Silicon Carbide 4" P Grade Si Face
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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
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6inch SiC Epitaxial Wafer
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47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°
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4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP