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GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

Certification

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p type silicon substrate online manufacture

(46)

Discrete Devices 2 Inch Silicon Wafer Thickness 675um 725um 775um
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Discrete Devices 2-Inch Silicon Wafer Thickness(m) 279/380/525/625/675/725/775 2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices Overview Demand for semiconductors ... Read More

2022-09-27 16:50:52

Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished
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Discrete Devices 2-Inch Silicon Wafer P/E,P/P,E/E,G/G Surface Finished 2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices Overview Silicon is the second most common ... Read More

2022-09-27 16:53:50

2 Inch SiC Substrate 350μm For Demanding Power Electronics
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P-Level 2-Inch SiC Substrate 4H-N/SI260m25m For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview High crystal quality for ... Read More

2024-10-29 11:49:58

Growth Method CZ Silicon Wafer 5" Orientation <1-0-0>, <1-1-1>, <1-1-0>
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Growth Method CZ Silicon Wafer Orientation ,, 2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices Overview Silicon wafers after cutting have sharp edges, and they ... Read More

2022-09-27 16:53:40

Prime 2'' Silicon Wafer Standard <10 μm Maximum Capabilities<5um
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Prime 2" Silicon Wafer TTV(m) Standard Read More

2022-09-27 16:52:11

Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:37:25

6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
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6inch 4H-SiC substrate N-Type P-MOS Grade 350.025.0m MPD0.2/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices ... Read More

2022-10-24 10:21:10

SiC N Type Substrate
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Currently silicon carbide (SiC) is widely used for high ... Read More

2022-10-09 16:57:15

100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H
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100.0mm0.5mm SiC Seed Crystal 4" P Grade 4.00.2 Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing ... Read More

2022-10-09 10:12:00

0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type
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0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.00.2 SiC Seed Crystal 4" PGrade SiC CRYSTAL is an ultra-high purity silicon carbide grain or powder, specially manufactured to achieve ... Read More

2022-09-27 17:01:16

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

p type silicon substrate online manufacture

Discrete Devices 2 Inch Silicon Wafer Thickness 675um 725um 775um
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Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished
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2 Inch SiC Substrate 350μm For Demanding Power Electronics
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Growth Method CZ Silicon Wafer 5" Orientation <1-0-0>, <1-1-1>, <1-1-0>
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Prime 2'' Silicon Wafer Standard <10 μm Maximum Capabilities<5um
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Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer
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6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
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SiC N Type Substrate
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100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H
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0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP