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GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
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n type sic crystal online manufacture

(26)

0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type
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0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.00.2 SiC Seed Crystal 4" PGrade SiC CRYSTAL is an ultra-high purity silicon carbide grain or powder, specially manufactured to achieve ... Read More

2022-09-27 17:01:16

6inch SiC Epitaxial Wafer
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P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4toward 0.5 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0M MPD0.5/Cm2 Resistivity 0.015Cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type ... Read More

2022-10-09 16:56:20

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°
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47.5 mm 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to1 JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon ... Read More

2024-10-29 11:49:58

JDZJ01-001-002 SiC Ingot Crystal 4" D Grade
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SiC ingot crystal 4" P grade SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC. SiC is an excellent thermal conductor. Heat will flow ... Read More

2025-04-04 22:43:20

4" P Grade Silicon Carbide Crystal Resistivity 0.015ohm.cm To 0.028ohm.cm
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4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials... Read More

2022-09-27 17:35:24

4inch 4H-SiC Substrate P-Level N-Type 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm
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4inch 4H-SiC substrate D-level N-Type 350.025.0m MPD5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview High Temperature Devices Because SiC has a high thermal conductivity, SiC dissipates ... Read More

2025-04-04 22:43:25

100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm
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100.0mm0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic ... Read More

2022-09-27 17:01:26

JDZJ01-001-004 SiC Ingot Crystal 6" P grade
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SiC ingot crystal 6" Pgrade Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th century silicon carbide has ... Read More

2025-04-04 22:42:33

Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm
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Primary Flat Lengh 32.5mm2.0mm SiC Seed Crystal 4" P Grade 100.0mm0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than ... Read More

2022-09-27 17:01:05

6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0c MPD0.5/cm2 Resistivity 0.015cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) are grown, machined into ingots, and ... Read More

2022-10-24 10:26:17

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

n type sic crystal online manufacture

0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type
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6inch SiC Epitaxial Wafer
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47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°
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JDZJ01-001-002 SiC Ingot Crystal 4" D Grade
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4" P Grade Silicon Carbide Crystal Resistivity 0.015ohm.cm To 0.028ohm.cm
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4inch 4H-SiC Substrate P-Level N-Type 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm
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100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm
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JDZJ01-001-004 SiC Ingot Crystal 6" P grade
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Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm
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6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP