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GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

Certification

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n type sic crystal online manufacture

(26)

100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H
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100.0mm0.5mm SiC Seed Crystal 4" P Grade 4.00.2 Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing ... Read More

2022-10-09 10:12:00

6inch 4H SiC Substrate N Type P SBD Grade 350μm
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6inch 4H-SiC substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into ... Read More

2022-10-24 10:23:04

150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm
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6inch 4H-SiC substrate D-level SI-Type 350.025.0m MPD5/cm2 Resistivity1E5cm for power and microwave devices Overview Sized for improved production With the 150 mm wafer size, we offer manufacturers the ability ... Read More

2022-10-24 10:22:12

4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
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4H SiC Epitaxial Wafer 0.015cm0.025cm 4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha ... Read More

2024-10-29 11:49:58

SiC N Type Substrate
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Currently silicon carbide (SiC) is widely used for high ... Read More

2022-10-09 16:57:15

350um 4H SiC substrate
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015Cm0.025Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) is a non-oxide ceramic engineering ... Read More

2022-10-09 16:57:57

6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
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6inch 4H-SiC substrate N-Type P-MOS Grade 350.025.0m MPD0.2/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices ... Read More

2022-10-24 10:21:10

2 Inch SiC Substrate 350μm For Demanding Power Electronics
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P-Level 2-Inch SiC Substrate 4H-N/SI260m25m For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview High crystal quality for ... Read More

2024-10-29 11:49:58

0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP
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0.015cm0.025cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching ... Read More

2024-10-29 11:49:58

N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
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6inch 4H-SiC substrate N-Type D Grade 350.025.0m MPD5/cm2 Resistivity 0.014cm0.028cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network solid. If we look at its structure, we ... Read More

2022-10-24 10:22:34

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

n type sic crystal online manufacture

100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H
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6inch 4H SiC Substrate N Type P SBD Grade 350μm
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150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm
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4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
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SiC N Type Substrate
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350um 4H SiC substrate
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6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
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2 Inch SiC Substrate 350μm For Demanding Power Electronics
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0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP
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N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP