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GaN Epitaxial Wafer
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SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

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free standing gan substrates online manufacture

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Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um
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2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 1 mm 350 25 m 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN Breakdown Field ... Read More

2022-10-08 17:12:14

Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device Overview Since the 1990s, it has been used commonly in light emitting diodes (LED). Gallium ... Read More

2025-04-27 11:43:51

5*10mm2 SP-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 20-21 / 20-2-1 10mm2 Resistivity 0.05 Ω·cm
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview A generative adversarial network (GAN) has two parts: The ... Read More

2025-04-27 11:43:51

SP-Face 11-12 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.05 Ω·cm Macro Defect Density 0cm⁻²
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview Because GaN transistors are able to turn on faster than silicon ... Read More

2025-04-27 11:43:51

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is ... Read More

2024-10-29 11:49:57

2 Inch U GaN Substrates SI GaN Substrates 50.8mm
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2-inch Free-standing U-GaN/SI-GaN Substrates 350 25 m 50.8 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN Template on ... Read More

2024-10-14 17:06:30

50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing
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50.8 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) 0.5o, 16 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN ... Read More

2022-10-08 17:22:16

10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview We sell directly from the factory, and therefore can offer the best prices on the ... Read More

2025-04-27 11:43:51

Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um
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2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 m (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser ... Read More

2022-10-08 17:14:45

C Face GaN Substrate
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2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview GaN has excellent material characteristics for use in power devices, including a ... Read More

2022-10-09 17:03:25

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

free standing gan substrates online manufacture

Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um
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Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1 Ω·cm and BOW within 10µm
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5*10mm2 SP-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 20-21 / 20-2-1 10mm2 Resistivity 0.05 Ω·cm
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SP-Face 11-12 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.05 Ω·cm Macro Defect Density 0cm⁻²
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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
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2 Inch U GaN Substrates SI GaN Substrates 50.8mm
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50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing
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10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer
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Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um
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C Face GaN Substrate
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP