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Silicon Wafer

China Silicon Wafer

JDCD06-001-002 3-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

Diameter:3"

Grade:Prime

Growth Method:CZ
JDCD07-001-003 6-Inch SOI Epitaxial Wafer For MEMS Processing

Orientation:<100>,<111>

Type/Dopant:P Type/Boron , N Type/Phos, N Type/As, N Type/Sb

Thickness(μm):300-725

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GaN Epitaxial Wafer: 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing; Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices; 2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer: Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um; 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um; Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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