2'' Semiconductor Silicon Wafer Thickness 279μm

Name: 2'' Semiconductor Silicon Wafer Thickness 279μm
Brand: Shanghai GaNova Electronic Information Co., Ltd.
SKU: JDCD06-001-002
Price: 1,000.00 USD
Availability: InStock

All Products

GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

Certification

I'm Online Chat Now

2'' Semiconductor Silicon Wafer Thickness 279μm

Large Image : 2'' Semiconductor Silicon Wafer Thickness 279μm

Product Details:

Place of Origin:	Suzhou China
Brand Name:	GaNova
Certification:	UKAS/ISO9001:2015
Model Number:	JDCD06-001-002

Payment & Shipping Terms:

Minimum Order Quantity:	1
Packaging Details:	Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Delivery Time:	3-4 week days
Payment Terms:	T/T
Supply Ability:	50000pcs/month

Contact Now

2'' Semiconductor Silicon Wafer Thickness 279μm

Description

Diameter:	2"	Orientation:	<1-0-0>,<1-1-1>,<1-1-0>
Type/Dopant:	P Type/Boron,N Type/Phos,N Type/As, N Type/Sb	Thickness(μm):	279
Thickness Tolerance:	Standard ± 25μm,Maximum Capabilities ± 5μm	Resistivity:	0.001-100 Ohm-cm
Surface Finished:	P/E,P/P,E/E,G/G	TTV(μm):	Standard <10 μm,Maximum Capabilities<5 μm
Bow/Warp:	Standard <40 μm,Maximum Capabilities<20 μm	Particle:	<10@0.5μm; <10@0.3μm; <10@0.2μm;
Highlight:	2'' semiconductor silicon wafer , N Type silicon epi wafer , n doped silicon wafer 279um

2-Inch Silicon Wafer Thickness(μm)279 Resistivity 0.001-100 Ohm-cm

2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

Overview

Few of us have a chance to encounter an actual silicon wafer in daily life. This ultra-flat disk is polished to a mirror-like surface, and made as free as possible of tiny surface irregularities, making it the flattest object in the world. It is also ultra-clean, virtually free of microparticles and other impurities. These qualities are necessary so it can be used as the substrate material of today's state-of-the-art semiconductors.

Specification

silicon wafer
Diameter	2"/3"/4"/5"/6"/8"/12"
Grade	Prime
Growth Method	CZ
Orientation	<1-0-0>,<1-1-1>,<1-1-0>
Type/Dopant	P Type/Boron,N Type/Phos,N Type/As, N Type/Sb
Thickness(μm)	279/380/525/625/675/725/775
Thickness Tolerance	Standard ± 25μm,Maximum Capabilit/ies ± 5μm
Resistivity	0.001-100 ohm-cm
Surface Finished	P/E,P/P,E/E,G/G
TTV(μm)	Standard <10 μm,Maximum Capabilities<5 μm
Bow/Warp	Standard <40 μm,Maximum Capabilities<20 μm
Particle	<10@0.5μm; <10@0.3μm; <10@0.2μm;

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Tag:

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

Other Products

0.001-100 ohm-cm Silicon Wafer P Type Boron Dopant

Diameter: 2"

Grade: Prime

Growth Method: CZ

Orientation: <1-0-0>,<1-1-1>,<1-1-0>

Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished

Growth Method: CZ

Diameter: 2"

Grade: Prime

Orientation: <1-0-0>,<1-1-1>,<1-1-0>

Prime 2'' Silicon Wafer Standard <10 μm Maximum Capabilities<5um

Diameter: 2"

Grade: Prime

Growth Method: CZ

Resistivity: 0.001-100 ohm-cm

Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate

Grade: Prime

Growth Method: CZ

Type/Dopant: P Type/Boron,N Type/Phos,N Type/As, N Type/Sb

Thickness(μm): 279

N Type Phos Silicon Wafer 3" Thickness 279um 380um 525um 625um

Type/Dopant: P Type/Boron,N Type/Phos,N Type/As, N Type/Sb

Thickness(μm): 279

Thickness Tolerance: Standard ± 25μm,Maximum Capabilities ± 5μm

Resistivity: 0.001-100 ohm-cm

2'' Semiconductor Silicon Wafer Thickness 279μm

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

2'' Semiconductor Silicon Wafer Thickness 279μm

2'' Semiconductor Silicon Wafer Thickness 279μm

2'' semiconductor silicon wafer

N Type silicon epi wafer

n doped silicon wafer 279um

N Type silicon epi wafer,

p type silicon substrate,

CZ Silicon Wafer

0.001-100 ohm-cm Silicon Wafer P Type Boron Dopant

Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished

Prime 2'' Silicon Wafer Standard <10 μm Maximum Capabilities<5um

Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate

N Type Phos Silicon Wafer 3" Thickness 279um 380um 525um 625um

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP