silicon carbide crystal p grade online manufacture

6inch 4H-SiC substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into ... Read More

JDCD03-001-004 SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face:CMP Overview It involves the growth of crystals of one material on the crystal face of another (heteroepitaxy) or the same (homoepitaxy) material... Read More

JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate ... Read More

6inch 4H-SiC substrate N-Type P-MOS Grade 350.025.0m MPD0.2/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices ... Read More

150.0mm +0mm/-0.2mm JDCD03-001-004 SiC Epitaxial Wafer 47.5 mm 1.5 mm Overview Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC ... Read More

JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high... Read More

JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for ... Read More

4H SiC Epitaxial Wafer 0.2 /Cm2 0.015Cm0.025Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon ... Read More

47.5 mm 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to1 JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon ... Read More

P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4toward 0.5 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0M MPD0.5/Cm2 Resistivity 0.015Cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type ... Read More