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sic epitaxial wafer c face online manufacture

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N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
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6inch 4H-SiC substrate N-Type D Grade 350.025.0m MPD5/cm2 Resistivity 0.014cm0.028cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network solid. If we look at its structure, we ... Read More

2022-10-24 10:22:34

P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm
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P-Level SI-Type 6inch 4H-SiC Semi insulating substrate 350.025.0m MPD0.5/cm2 Resistivity1E9cm 6inch 4H-SiC substrate P-level SI-Type 350.025.0m MPD0.5/cm2 Resistivity1E9cm for power and microwave devices ... Read More

2022-10-24 10:21:46

2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors ... Read More

2025-04-04 22:43:44

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GaN Epitaxial Wafer