n type sic crystal online manufacture

0.015cm0.025cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching ... Read More

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors ... Read More

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were ... Read More

P-Level SI-Type 6inch 4H-SiC Semi insulating substrate 350.025.0m MPD0.5/cm2 Resistivity1E9cm 6inch 4H-SiC substrate P-level SI-Type 350.025.0m MPD0.5/cm2 Resistivity1E9cm for power and microwave devices ... Read More

M Face Free-Standing GaN Substrates Front Surface Roughness < 0.2 Nm (Polished) Or < 0.3 nm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser ... Read More

5 x 10mm2 Free-standing GaN Substrates 350 25 m From 1 x 105 to 3 x 106 cm-2 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer ... Read More