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GaN Epitaxial Wafer
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SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

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n type sic epitaxial wafer online manufacture

(23)

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were ... Read More

2024-10-14 17:06:30

350um 4H SiC substrate
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015Cm0.025Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) is a non-oxide ceramic engineering ... Read More

2022-10-09 16:57:57

SiC N Type Substrate
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Currently silicon carbide (SiC) is widely used for high ... Read More

2022-10-09 16:57:15

6inch 4H SiC Substrate N Type P SBD Grade 350μm
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6inch 4H-SiC substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into ... Read More

2022-10-24 10:23:04

6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0c MPD0.5/cm2 Resistivity 0.015cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) are grown, machined into ingots, and ... Read More

2022-10-24 10:26:17

N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
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6inch 4H-SiC substrate N-Type D Grade 350.025.0m MPD5/cm2 Resistivity 0.014cm0.028cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network solid. If we look at its structure, we ... Read More

2022-10-24 10:22:34

150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm
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6inch 4H-SiC substrate D-level SI-Type 350.025.0m MPD5/cm2 Resistivity1E5cm for power and microwave devices Overview Sized for improved production With the 150 mm wafer size, we offer manufacturers the ability ... Read More

2022-10-24 10:22:12

4inch 4H-SiC Substrate P-Level N-Type 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm
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4inch 4H-SiC substrate D-level N-Type 350.025.0m MPD5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview High Temperature Devices Because SiC has a high thermal conductivity, SiC dissipates ... Read More

2025-04-04 22:43:25

6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
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6inch 4H-SiC substrate N-Type P-MOS Grade 350.025.0m MPD0.2/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices ... Read More

2022-10-24 10:21:10

Front Surface Roughness GaN On Silicon Wafer GaN Substrate
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M Face Free-Standing GaN Substrates Front Surface Roughness < 0.2 Nm (Polished) Or < 0.3 nm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser ... Read More

2022-10-08 17:19:48

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

n type sic epitaxial wafer online manufacture

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
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350um 4H SiC substrate
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SiC N Type Substrate
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6inch 4H SiC Substrate N Type P SBD Grade 350μm
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6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat
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N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
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150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm
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4inch 4H-SiC Substrate P-Level N-Type 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm
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6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
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Front Surface Roughness GaN On Silicon Wafer GaN Substrate
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP