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https://www.epi-wafers.com/photo/pl118147214-single_side_polished_ga2o3_substrate_single_crystal_thickness_0_6mm_0_8mm.jpg https://www.epi-wafers.com/sale-31416281-ra-0-3nm-ga2o3-single-crystal-epitaxial-wafer-2-inch-4-inch.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl118702261-ra_0_3nm_ga2o3_single_crystal_epitaxial_wafer_2_inch_4_inch.jpg https://www.epi-wafers.com/sale-31468906-2-inch-u-gan-substrates-si-gan-substrates-50-8mm.html 0.8 weekly 2026-01-29 https://www.epi-wafers.com/photo/pl118954138-2_inch_u_gan_substrates_si_gan_substrates_50_8mm.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241014_670cc42997821.mp4.jpg?1728896789 2 Inch U GaN Substrates SI GaN Substrates 50.8mm 2-inch Free-standing U-GaN/SI-GaN Substrates 350 25 m 50.8 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity &lt; 0.1 cm Power device/laser wafer Overview GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate. https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/420742ee781e900aa90f26f12e636cd0/playlist.m3u8 17 2024-10-14T15:11:37+08:00 6 4.8 U GaN Substrates GaN 2 Inch Wafer SI GaN Substrates 50.8mm https://www.epi-wafers.com/sale-31468952-2-inch-free-standing-si-gan-substrates.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl118954349-2_inch_free_standing_si_gan_substrates.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241014_670cc42997821.mp4.jpg?1728896789 2 inch Free-standing SI-GaN Substrates 2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity &gt; 106 cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two-dimension electron gas generated from the interface of AlGaN and GaN, the thickness ratio of Fe-doped and undoped GaN bi-epilayers was also optimized. AlGaN/GaN high electron mobility transistors with the optimum doping concentration of Fe-doped GaN and suitable thickness of undoped GaN have been https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/420742ee781e900aa90f26f12e636cd0/playlist.m3u8 17 2024-10-14T15:11:37+08:00 6 4.4 350um GaN Epitaxial Wafer Free Standing GaN Substrates GaN Epitaxial Wafer 10 X 10.5 mm2 https://www.epi-wafers.com/sale-31468964-2inch-gan-epitaxial-wafer-c-face-fe-doped-si-type-free-standing.html 0.8 weekly 2025-10-17 https://www.epi-wafers.com/photo/pl118954411-2inch_gan_epitaxial_wafer_c_face_fe_doped_si_type_free_standing.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241014_670cc42997821.mp4.jpg?1728896789 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing 2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity &gt; 106 cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were studied using metalorganic chemical vapor deposition for high breakdown voltage device applications. A smooth Fe-doped GaN epilayer surface can be realized by changing the ferrocene flow, while higher Fe concentrations in the GaN epilayer affect the surface morphology https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/420742ee781e900aa90f26f12e636cd0/playlist.m3u8 17 2024-10-14T15:11:37+08:00 6 4.3 GaN Epitaxial Wafer C Face Fe Doped single crystal substrate 2inch GaN Epitaxial Wafer https://www.epi-wafers.com/sale-29256981-5x10mm2-sp-face-gan-epitaxial-wafer-un-doped-si-type-gan-single-crystal-substrate.html 0.8 weekly 2024-10-29 https://www.epi-wafers.com/photo/pl108136183-5x10mm2_sp_face_gan_epitaxial_wafer_un_doped_si_type_gan_single_crystal_substrate.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity &gt; 106 cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN It is a Deep convolutional GAN. ... Conditional GAN and Unconditional GAN (CGAN) Conditional GAN is deep learning neural network in which some additional parameters are used. (20-21)/(20-2-1) face Free-standing GaN Substrates Item GaN-FS-SP-U-S GaN-FS-SP-N-S GaN-FS-SP https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.6 5x10.5mm2 GaN Epitaxial Wafer Un Doped Epitaxial Wafer ISO SP Face GaN Epitaxial Wafer https://www.epi-wafers.com/sale-29257022-gallium-nitride-semiconductor-wafer-325um-375um-c-plane.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl108136467-gallium_nitride_semiconductor_wafer_325um_375um_c_plane.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 Gallium Nitride Semiconductor Wafer 325um 375um C Plane 2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi-layered epitaxial wafers are used for the devices mainly to control electric power, and they are contributing to improving the efficiency of energy https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.7 Gallium Nitride Semiconductor Wafer C Plane gan epi wafer Semiconductor Wafer 325um https://www.epi-wafers.com/sale-31411636-thickness-370um-430um-2-inch-gan-epi-wafer-dimensions-50mm.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl118680099-thickness_370um_430um_2_inch_gan_epi_wafer_dimensions_50mm.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm Thickness 400 30 m 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity &lt; 0.05 cm Power device/laser wafer Overview The most common method, metal organic chemical vapor deposition (MOCVD), inherently results in GaN that is contaminated by carbon, oxygen, and silicon atoms originating from the metal-organic precursors, susceptors, and reactor walls. The extent of contamination https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.8 2 Inch GaN Epi Wafer 370um single crystal wafer 430um GaN Epi Wafer https://www.epi-wafers.com/sale-31412140-625um-to-675um-4-inch-blue-led-gan-epitaxial-wafer-on-sapphire-ssp-flat-sapphire.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl118682489-625um_to_675um_4_inch_blue_led_gan_epitaxial_wafer_on_sapphire_ssp_flat_sapphire.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire Substrate Thickness 650 25 m 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.1 625um GaN Epitaxial Wafer SSP gan on sapphire wafers 675um GaN Epitaxial Wafer https://www.epi-wafers.com/sale-31412246-single-crystal-gallium-nitride-semiconductor-wafer-ttv-10um.html 0.8 weekly 2025-10-25 https://www.epi-wafers.com/photo/pl118683012-single_crystal_gallium_nitride_semiconductor_wafer_ttv_10um.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity &lt; 0.1 cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms &lt; 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epitaxial growth has been achieved. Laser diodes: violet LD, blue LD, and green LD Power electronic devices, High frequency electronic devices M face Free-standing GaN Substrates Item GaN https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.8 Single Crystal Semiconductor Wafer TTV 10um epi wafer Gallium Nitride Semiconductor Wafer https://www.epi-wafers.com/sale-31416369-high-purity-al2o3-99-995-sapphire-wafer-mirror-polished-epi-ready.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl118702530-high_purity_al2o3_99_995_sapphire_wafer_mirror_polished_epi_ready.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 High Purity Al2O3 99.995% Sapphire Wafer Mirror Polished EPI Ready High purity Al2O3 99.995% Sapphire Substrate Wafer Mirror Polished EPI-Ready JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430 m, crystal orientation C/M0.2, OF length (mm) 16 LED chip,substrate material Sapphire Substrate Sapphire Substrate makes for superior window material for many IR applications from 3 m to 5 m, for they offer resistant to high temperature, thermal shock, water and sand erosion, small dielectric loss, excellent electrical insulation, with https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.9 Sapphire Wafer EPI Ready led sapphire substrate R9 sapphire wafer A Plane https://www.epi-wafers.com/sale-31468745-un-doped-n-type-gan-single-crystal-substrate-5x10mm2-m-face.html 0.8 weekly 2026-01-17 https://www.epi-wafers.com/photo/pl118953431-un_doped_n_type_gan_single_crystal_substrate_5x10mm2_m_face.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 Un Doped N Type GaN Single Crystal Substrate 5x10mm2 M Face 5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity &lt; 0.1 cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short laser pulses on the thermal decomposition of GaN and possible applications of the laser-induced dissociation of GaN for fast etching of this material is discussed. Particular emphasis https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.8 GaN Single Crystal Substrate Gallium Nitride N Type Wafer Single Crystal Substrate 5x10.5mm2 https://www.epi-wafers.com/sale-31468835-5x10mm2-gan-epitaxial-wafer-un-doped-si-type.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl118953806-5x10mm2_gan_epitaxial_wafer_un_doped_si_type.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 5x10mm2 GaN Epitaxial Wafer Un Doped SI Type 5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity &gt; 106 cm RF devices wafer Overview Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits several characteristics that make it better than GaAs and Silicon for various high power components. These characteris https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.2 GaN Epitaxial Wafer SI Type 5x10.5mm2 gan epi wafer 5x10.5mm2 GaN Epitaxial Wafer https://www.epi-wafers.com/sale-31468958-fe-doped-gan-substrates-resistivity-10-cm-rf-devices.html 0.8 weekly 2024-10-29 https://www.epi-wafers.com/photo/pl118954379-fe_doped_gan_substrates_resistivity_10_cm_rf_devices.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 Fe Doped GaN Substrates Resistivity > 10 Cm RF Devices 2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity &gt; 106 cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain the high breakdown voltage. The details of the correlation between the surface morphology, Fe concentration, and thickness of Fe-doped GaN epitaxial layers used for high breakdown https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.4 ISO GaN Substrates gan semiconductor wafer Fe Doped GaN Substrates https://www.epi-wafers.com/sale-27104094-0-6mm-0-8mm-ga2o3-single-crystal-substrate-single-polishing.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl97316489-0_6mm_0_8mm_ga2o3_single_crystal_substrate_single_polishing.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM 350arcsec,Ra 0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.1 Ga2O3 Single Crystal Substrate Gallium Oxide wafer 0.6mm 0.8mm Single Crystal Substrate https://www.epi-wafers.com/sale-29258933-p-level-2-inch-sic-substrate-for-power-devices-and-microwave-devices.html 0.8 weekly 2026-01-15 https://www.epi-wafers.com/photo/pl108141644-p_level_2_inch_sic_substrate_for_power_devices_and_microwave_devices.jpg https://www.epi-wafers.com/photo/pl108141637-p_level_2_inch_sic_substrate_for_power_devices_and_microwave_devices.jpg https://www.epi-wafers.com/photo/pl108141639-p_level_2_inch_sic_substrate_for_power_devices_and_microwave_devices.jpg https://www.epi-wafers.com/photo/pl108141643-p_level_2_inch_sic_substrate_for_power_devices_and_microwave_devices.jpg https://www.epi-wafers.com/photo/pl108141640-p_level_2_inch_sic_substrate_for_power_devices_and_microwave_devices.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices P-Level 4H-N/SI260um 25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260 m 25 m for power devices and microwave devices Overview Key features Optimizes targeted performance and total cost of ownership for next generation power electronics devices Large diameter wafers for improved economies of scale in semiconductor manufacturing Range of tolerance levels to meet specific device fabrication needs High https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.6 P Level SiC Substrate Microwave Devices silicon carbide substrate 2 Inch SiC Substrate https://www.epi-wafers.com/sale-31223665-4h-sic-epitaxial-wafer-0-2-cm2-0-015-cm-0-025-cm-150-0-mm-0mm-0-2mm.html 0.8 weekly 2025-10-23 https://www.epi-wafers.com/photo/pl117854375-4h_sic_epitaxial_wafer_0_2_cm2_0_015_cm_0_025_cm_150_0_mm_0mm_0_2mm.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 4H SiC Epitaxial Wafer 0.2 /cm2 0.015 cm 0.025 cm 150.0 mm +0mm/-0.2mm 4H SiC Epitaxial Wafer 0.2 /Cm2 0.015 Cm 0.025 Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon wafer, so the 200-mm diameter can be used for more SiC devices. The 200-mm size is much more efficient and will allow more devices to be built on the same size. A 200-mm-diameter SiC is a very expensive semiconductor, but its high yield makes up for this disadvantag https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.6 4H SiC Epitaxial Wafer silicon carbide wafer ISO9001 SiC Epitaxial Wafer 0.2 /Cm2 https://www.epi-wafers.com/sale-31296738-2-inch-sic-substrate-350-m-for-demanding-power-electronics.html 0.8 weekly 2024-10-29 https://www.epi-wafers.com/photo/pl118148119-2_inch_sic_substrate_350_m_for_demanding_power_electronics.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 2 Inch SiC Substrate 350 m For Demanding Power Electronics P-Level 2-Inch SiC Substrate 4H-N/SI260 m 25 m For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260 m 25 m for power devices and microwave devices Overview High crystal quality for demanding power electronics As transportation, energy and industrial markets evolve, demand for reliable, high performance power electronics continues to grow. To meet the needs for improved semiconductor performance, device manufacturers are looking to wide https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.6 2 Inch SiC Substrate Demanding Power Electronics 2 inch wafer SiC Substrate 350um https://www.epi-wafers.com/sale-31296747-260-m-silicon-carbide-substrate-p-level-for-power-devices-and-microwave-devices.html 0.8 weekly 2026-01-30 https://www.epi-wafers.com/photo/pl118148167-260_m_silicon_carbide_substrate_p_level_for_power_devices_and_microwave_devices.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 260 m Silicon Carbide Substrate P Level For Power Devices And Microwave Devices 4H-N/SI260 m 25 m 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260 m 25 m for power devices and microwave devices Overview We contribute to the SiC success story by developing and manufacturing market-leading quality SiC substrates. We have years of SiC production experience and a corporate background in high-volume manufacturing excellence. Our large and continuously expanding IP portfolio ensures https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.2 260um silicon carbide substrate Power Devices Epitaxial Wafer silicon carbide substrate P Level https://www.epi-wafers.com/sale-31411645-12-5mm-2inch-freestanding-n-gan-epi-wafer-si-doped.html 0.8 weekly 2025-07-17 https://www.epi-wafers.com/photo/pl118680154-12_5mm_2inch_freestanding_n_gan_epi_wafer_si_doped.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped (1- 100) 0.1o, 12.5 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity &lt; 0.05 cm Power device/laser wafer Growth of 1- m-thick Si-doped GaN films was performed by PSD with pulsed magnetron sputtering sources in an N2/Ar atmosphere. The Si doping concentration in GaN was controlled from 2 1016 to 2 1020 cm 3 by varying Si vapor flux from a solid state single crystalline Si https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.2 12.5mm gan epi wafer 2inch gallium nitride wafer 2Inch gan epi wafer https://www.epi-wafers.com/sale-31412721-polytype-none-permitted-sic-epitaxial-wafer-p-mos-p-sbd-d-grade.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl118685135-polytype_none_permitted_sic_epitaxial_wafer_p_mos_p_sbd_d_grade.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to its high thermal resistance, it also features a very high level of hardness. Compared to other semiconductors, a silicon carbide wafer is ideal for a wide range of power and https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.9 SiC Epitaxial Wafer P-MOS D Grade silicon epi wafer SiC Epitaxial Wafer P-SBD https://www.epi-wafers.com/sale-31412723-0-015-cm-0-025-cm-sic-epitaxial-wafer-c-face-optical-polish-si-face-cmp.html 0.8 weekly 2025-10-25 https://www.epi-wafers.com/photo/pl118685151-0_015_cm_0_025_cm_sic_epitaxial_wafer_c_face_optical_polish_si_face_cmp.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 0.015 cm 0.025 cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP 0.015 cm 0.025 cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching the crystal. It is typically thin enough to be used for power semiconductor devices. The other type is a type of insulator. The temperature range is extremely important for electrical and magnetic fields in power semiconductors. A silicon carbide wafer is conductive https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.7 SiC Epitaxial Wafer C-Face Optical Polish sic wafer Si-Face CMP Sic Epitaxial Wafer https://www.epi-wafers.com/sale-31412798-4h-sic-epitaxial-wafer-0-015-cm-0-025-cm-4000-cm-150-0-mm-0mm-0-2mm.html 0.8 weekly 2025-10-21 https://www.epi-wafers.com/photo/pl118685577-4h_sic_epitaxial_wafer_0_015_cm_0_025_cm_4000_cm_150_0_mm_0mm_0_2mm.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 4H SiC Epitaxial Wafer 0.015 cm 0.025 Cm 4000/cm 150.0 mm +0mm/-0.2mm 4H SiC Epitaxial Wafer 0.015 cm 0.025 cm 4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite. The beta form is similar to diamond, and is used in a few applications. It has been the preferred choice in power semis for electric vehicles. Several third-party SiC wafer https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.9 4H SiC Epitaxial Wafer silicon epi wafer 0.025Ω•Cm SiC Epitaxial Wafer 0.015Ω•Cm https://www.epi-wafers.com/sale-31412805-47-5-mm-1-5-mm-sic-epitaxial-wafer-150-0-mm-0mm-0-2mm-parallel-to-11-20-1.html 0.8 weekly 2025-10-20 https://www.epi-wafers.com/photo/pl118685596-47_5_mm_1_5_mm_sic_epitaxial_wafer_150_0_mm_0mm_0_2mm_parallel_to_11_20_1.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 47.5 mm 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20> 1 47.5 mm 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to 1 JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diameter. It is used in high-power electronics. The second type is the epitaxial crystalline silicon carbide wafer. This type of wafer is created by adding layers of single silicon https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.1 446mm SiC Epitaxial Wafer 4 H epitaxial silicon wafer UKAS SiC Epitaxial Wafer https://www.epi-wafers.com/sale-31412813-150-0mm-0mm-0-2mm-sic-epitaxial-wafer-no-secondary-flat-3mm.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl118685631-150_0mm_0mm_0_2mm_sic_epitaxial_wafer_no_secondary_flat_3mm.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, which means that wafer supply is crucial to success. To accommodate the increased demand for SiC semiconductors, chipmakers are increasingly turning to both in-house and external https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.6 150.0 mm SiC Epitaxial Wafer silicon carbide wafer 3mm SiC Epitaxial Wafer No Secondary Flat https://www.epi-wafers.com/sale-31413194-semi-insulating-ain-sapphire-wafer-sapphire-single-or-double-side-polished.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl118687418-semi_insulating_ain_sapphire_wafer_sapphire_single_or_double_side_polished.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 Semi Insulating AIN Sapphire Wafer Sapphire Single or Double Side Polished 2 Inch Thick Film (1,2) m AIN On Sapphire Wafer SSP XRD FWHM Of(002) 80arcsec(102) 650arcsec UV Disinfection LED Chip The material is a good electrical insulator with excellent thermal conductivity. Its high insulating properties make it an excellent choice for a variety of applications. A wide variety of products can be made from aluminum nitride. This is the most common use for aluminum nitride. It is an important material in the aerospace industry. However, there are some https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.9 AIN Sapphire Wafer Semi Insulating AIN Wafer Sapphire Wafer Single Side Polished https://www.epi-wafers.com/sale-31416289-sn-doping-ga2o3-wafer-single-crystal-substrate-10x10mm2.html 0.8 weekly 2025-10-17 https://www.epi-wafers.com/photo/pl118702297-sn_doping_ga2o3_wafer_single_crystal_substrate_10x10mm2.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 Sn Doping Ga2O3 Wafer Single Crystal Substrate 10x10mm2 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM 350arcsec,Ra 0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic -gallia structure ( -phase or -Ga2O3) is the most stable crystal structure and has attracted most of the recent attention. The different polymorphs can be either insulators or conductors, https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.9 Sn Doping Ga2O3 Wafer 0.8mm Gallium Oxide wafer Ga2O3 Wafer 10x10mm2 https://www.epi-wafers.com/sale-31420457-single-side-polished-ga2o3-wafer-single-crystal-substrate.html 0.8 weekly 2025-10-20 https://www.epi-wafers.com/photo/pl118722296-single_side_polished_ga2o3_wafer_single_crystal_substrate.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 Single Side Polished Ga2O3 Wafer Single Crystal Substrate 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM 350arcsec,Ra 0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.5 Side Polished Ga2O3 Wafer 0.6mm gallium nitride substrate Ga2O3 Wafer UKAS https://www.epi-wafers.com/sale-27987170-150mm-rapid-thermal-annealing-system-with-three-sets-process-gases.html 0.8 weekly 2025-10-17 https://www.epi-wafers.com/photo/pl101788336-150mm_rapid_thermal_annealing_system_with_three_sets_process_gases.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20240926_66f512b502427.mp4.jpg?1727341541 150mm Rapid Thermal Annealing System With Three Sets Process Gases RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 inch wafer.Its unique cavity design, advanced temperature control technology and a unique RL900 software control system over conventional diffusion furnace annealing systems ensures https://www.epi-wafers.com/vodcdn/videos/encoder/1202409/a4931f93706da4ff3bcb1dbdd191f8be/playlist.m3u8 7 2024-09-26T15:52:20+08:00 48 4.1 150mm Rapid Thermal Annealing System desktop rapid thermal processing equipment Wafer Rapid Thermal Annealing System https://www.epi-wafers.com/sale-31412121-4-inch-blue-led-gan-epitaxial-wafer-c-plane-flat-sapphire.html 0.8 weekly 2025-08-16 https://www.epi-wafers.com/photo/pl118682417-4_inch_blue_led_gan_epitaxial_wafer_c_plane_flat_sapphire.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241118_673b0851c06f7.mp4.jpg?1731928637 4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 0.1 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages one, it consumes lesser power, two, it is more efficient in terms of light output. For instance, from 2014, to 2018, with advancement in phosphor, the efficiency of blue LEDs increased from 130-140 lm/W to 200-210 lm/W. Another major problem in producing https://www.epi-wafers.com/vodcdn/videos/encoder/1202411/45ee2511ab73b51e99dde76c4479f0d6/playlist.m3u8 19 2024-11-18T17:26:37+08:00 6 4.6 Blue LED GaN Epitaxial Wafer 4 Inch led wafer GaN Epitaxial Wafer C Plane https://www.epi-wafers.com/sale-31412254-5-x-10-mm2-m-face-gan-epitaxial-wafer-thickness-325um-375um.html 0.8 weekly 2025-10-24 https://www.epi-wafers.com/photo/pl118683031-5_x_10_mm2_m_face_gan_epitaxial_wafer_thickness_325um_375um.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241118_673b0851c06f7.mp4.jpg?1731928637 5 X 10 mm2 M Face GaN Epitaxial Wafer Thickness 325um 375um 5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 25 m 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity &lt; 0.05 cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power devices for use in projector light sources, inverters for electric vehicles, and other applications. The features are high crystalline, good uniformity, and superior surface quality. GaN https://www.epi-wafers.com/vodcdn/videos/encoder/1202411/45ee2511ab73b51e99dde76c4479f0d6/playlist.m3u8 19 2024-11-18T17:26:37+08:00 6 4.9 5 X 10.5 mm2 GaN Epitaxial Wafer 325um gan gallium nitride wafer GaN Epitaxial Wafer 375um https://www.epi-wafers.com/sale-31468913-375-um-gan-epitaxial-wafer-free-standing-u-gan-si-gan-substrates.html 0.8 weekly 2025-06-28 https://www.epi-wafers.com/photo/pl118954160-375_um_gan_epitaxial_wafer_free_standing_u_gan_si_gan_substrates.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241118_673b0851c06f7.mp4.jpg?1731928637 375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates 350 25 m (11-20) 3o, 8 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity &lt; 0.1 cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the surface roughness of GaN Single Crystal Substrate with an atomic force microscope, which applies to GaN single crystal substrates grown by chemical vapor deposition and other methods https://www.epi-wafers.com/vodcdn/videos/encoder/1202411/45ee2511ab73b51e99dde76c4479f0d6/playlist.m3u8 19 2024-11-18T17:26:37+08:00 6 4.7 375um GaN Epitaxial Wafer gallium nitride wafer UKAS GaN Epitaxial Wafer 50.8mm https://www.epi-wafers.com/sale-50926394-4inch-gan-on-silicon-green-led-epi-wafer-sic-epitaxial-wafers.html 0.8 weekly 2024-12-06 https://www.epi-wafers.com/photo/pl118685596-4inch_gan_on_silicon_green_led_epi_wafer_sic_epitaxial_wafers.jpg https://www.epi-wafers.com/photo/pl118685631-4inch_gan_on_silicon_green_led_epi_wafer_sic_epitaxial_wafers.jpg https://www.epi-wafers.com/sale-50926681-4inch-gan-on-silicon-green-led-epi-wafer-sic-epitaxial-wafers.html 0.8 weekly 2025-10-23 https://www.epi-wafers.com/photo/pl118685151-4inch_gan_on_silicon_green_led_epi_wafer_sic_epitaxial_wafers.jpg https://www.epi-wafers.com/photo/pl118685188-4inch_gan_on_silicon_green_led_epi_wafer_sic_epitaxial_wafers.jpg https://www.epi-wafers.com/sale-50927492-4inch-ugan-on-silicon-undoped-gallium-nitride-on-silicon-epitaxial-wafer.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl118686077-4inch_ugan_on_silicon_undoped_gallium_nitride_on_silicon_epitaxial_wafer.jpg https://www.epi-wafers.com/photo/pl118686004-4inch_ugan_on_silicon_undoped_gallium_nitride_on_silicon_epitaxial_wafer.jpg https://www.epi-wafers.com/sale-50857245-algan-barrier-4-inch-gan-on-silicon-hemt-epi-wafer-gallium-nitride-gan-on-si.html 0.8 weekly 2025-10-23 https://www.epi-wafers.com/photo/pl117854349-algan_barrier_4_inch_gan_on_silicon_hemt_epi_wafer_gallium_nitride_gan_on_si.jpg https://www.epi-wafers.com/sale-50857955-gan-violet-laser-on-silicon-2-inch-gan-on-silicon-hemt-epi-wafer-uv-ld-epi-wafer.html 0.8 weekly 2026-01-14 https://www.epi-wafers.com/photo/pl118686004-gan_violet_laser_on_silicon_2_inch_gan_on_silicon_hemt_epi_wafer_uv_ld_epi_wafer.jpg https://www.epi-wafers.com/photo/pl118685966-gan_violet_laser_on_silicon_2_inch_gan_on_silicon_hemt_epi_wafer_uv_ld_epi_wafer.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241203_674ecf9601d84.mp4.jpg?1733229350 GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon substrate. This structure enables gallium nitride HEMTs to have high electron mobility and saturation electron velocity, making them suitable for high-power and high-frequency https://www.epi-wafers.com/vodcdn/videos/encoder/1202412/440bc44685fd6d3af5945db22c65b9c7/playlist.m3u8 52 2024-12-03T17:29:43+08:00 80 4.1 2 inch sic epitaxial wafer 2 inch sic epi wafer 2 inch sic epi wafers https://www.epi-wafers.com/sale-50917818-2inch-gan-on-silicon-blue-ld-epi-wafer-gan-blue-laser-on-silicon.html 0.8 weekly 2024-12-06 https://www.epi-wafers.com/photo/pl118685966-2inch_gan_on_silicon_blue_ld_epi_wafer_gan_blue_laser_on_silicon.jpg https://www.epi-wafers.com/photo/pl118686004-2inch_gan_on_silicon_blue_ld_epi_wafer_gan_blue_laser_on_silicon.jpg https://www.epi-wafers.com/sale-50918138-2inch-gan-on-silicon-green-led-epi-wafer-gallium-nitride-on-silicon.html 0.8 weekly 2025-07-17 https://www.epi-wafers.com/photo/pl133750493-2inch_gan_on_silicon_green_led_epi_wafer_gallium_nitride_on_silicon.jpg https://www.epi-wafers.com/sale-50917877-blue-led-gan-on-silicon-wafer-blue-laser-gan-epitaxial-wafer.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl133766416-blue_led_gan_on_silicon_wafer_blue_laser_gan_epitaxial_wafer.jpg https://www.epi-wafers.com/photo/pl133750493-blue_led_gan_on_silicon_wafer_blue_laser_gan_epitaxial_wafer.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241203_674ecf9601d84.mp4.jpg?1733229350 Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon substrate. This structure enables gallium nitride HEMTs to have high electron mobility and saturation electron velocity, making them suitable for high-power and high-frequency https://www.epi-wafers.com/vodcdn/videos/encoder/1202412/440bc44685fd6d3af5945db22c65b9c7/playlist.m3u8 52 2024-12-03T17:29:43+08:00 80 4.1 Silicon Based Gallium Nitride Epitaxial Wafer HEMT epitaxial wafer 4 inch sic epitaxial wafer https://www.epi-wafers.com/sale-50857330-6-inch-gan-on-silicon-hemt-epi-wafer-power-device-gallium-nitride-gan-on-si.html 0.8 weekly 2026-01-31 https://www.epi-wafers.com/photo/pl133750493-6_inch_gan_on_silicon_hemt_epi_wafer_power_device_gallium_nitride_gan_on_si.jpg https://www.epi-wafers.com/photo/pl118685188-6_inch_gan_on_silicon_hemt_epi_wafer_power_device_gallium_nitride_gan_on_si.jpg https://www.epi-wafers.com/sale-50556647-2-inch-gan-on-silicon-hemt-epi-wafer-for-power-device.html 0.8 weekly 2026-01-26 https://www.epi-wafers.com/photo/pl133750493-2_inch_gan_on_silicon_hemt_epi_wafer_for_power_device.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20240719_669a312024a83.mp4.jpg?1721633200 2 Inch GaN On Silicon HEMT Epi Wafer For Power Device Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon substrate. This structure enables gallium nitride HEMTs to have high electron mobility and saturation electron velocity, making them suitable for high-power and high-frequency https://www.epi-wafers.com/vodcdn/videos/encoder/1202407/6bec0d57fe3dd100979d43599fdb2da5/playlist.m3u8 19 2024-07-19T17:25:51+08:00 14 4.1 GaN On Silicon HEMT Epi Wafer 2 Inch Epi Wafer Power Device Epi Wafer https://www.epi-wafers.com/sale-50552331-2-inch-power-device-high-electron-mobility-transistor-epitaxial-wafer.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl118148167-2_inch_power_device_high_electron_mobility_transistor_epitaxial_wafer.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20240719_669a312024a83.mp4.jpg?1721633200 2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon substrate. This structure enables gallium nitride HEMTs to have high electron mobility and saturation electron velocity, making them suitable for high-power and high-frequency https://www.epi-wafers.com/vodcdn/videos/encoder/1202407/6bec0d57fe3dd100979d43599fdb2da5/playlist.m3u8 19 2024-07-19T17:25:51+08:00 14 4.8 sic epitaxial wafer 2 Inch Power Device sic epitaxial wafer High Electron Mobility Transistor Epitaxial Wafer https://www.epi-wafers.com/sale-50546452-4-inch-fe-doped-freestanding-gan-substrate-gallium-nitride.html 0.8 weekly 2025-10-24 https://www.epi-wafers.com/photo/pl169417969-4_inch_fe_doped_freestanding_gan_substrate_gallium_nitride.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20240719_669a312024a83.mp4.jpg?1721633200 4 Inch Fe Doped Freestanding GaN Substrate Gallium Nitride Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. 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Preparation process The https://www.epi-wafers.com/vodcdn/videos/encoder/1202407/6bec0d57fe3dd100979d43599fdb2da5/playlist.m3u8 19 2024-07-19T17:25:51+08:00 14 4.5 4 Inch gan substrate Fe Doped gan substrate Freestanding gan substrate https://www.epi-wafers.com/sale-50545911-single-crystal-gan-epi-wafer-gallium-nitride-substrate-4-inch.html 0.8 weekly 2025-10-24 https://www.epi-wafers.com/photo/pl169417969-single_crystal_gan_epi_wafer_gallium_nitride_substrate_4_inch.jpg https://www.epi-wafers.com/sale-50541458-gan-2-inch-gallium-nitride-single-crystal-substrate.html 0.8 weekly 2025-10-24 https://www.epi-wafers.com/photo/pl169417970-gan_2_inch_gallium_nitride_single_crystal_substrate.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241014_670cc42997821.mp4.jpg?1728896789 GaN 2 Inch Gallium Nitride Single Crystal Substrate Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium nitride (GaN)crystals have a wide range of application scenarios, including LEDs, high-speed electronic devices, and power electronic devices. https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/420742ee781e900aa90f26f12e636cd0/playlist.m3u8 17 2024-10-14T15:11:37+08:00 6 4.1 GaN Gallium Nitride Single Crystal Substrate 2inch Gallium Nitride Single Crystal Substrate https://www.epi-wafers.com/sale-48953459-625um-to-675um-4-inch-blue-led-gallium-nitride-gan-epitaxial-wafer-on-sapphire-ssp-flat-sapphire.html 0.8 weekly 2025-10-25 https://www.epi-wafers.com/photo/pl118154070-625um_to_675um_4_inch_blue_led_gallium_nitride_gan_epitaxial_wafer_on_sapphire_ssp_flat_sapphire.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire Substrate Thickness 650 25 m 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.2 625um gan epi wafer 675um gan epi wafer 4 inch gan epitaxial wafer https://www.epi-wafers.com/sale-47229143-gan-epitaxial-wafer-essential-for-high-voltage-high-frequency-chip-production.html 0.8 weekly 2026-01-13 https://www.epi-wafers.com/photo/pl169417970-gan_epitaxial_wafer_essential_for_high_voltage_high_frequency_chip_production.jpg https://www.epi-wafers.com/photo/pl169417969-gan_epitaxial_wafer_essential_for_high_voltage_high_frequency_chip_production.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20240719_669a312024a83.mp4.jpg?1721633200 GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor Deposition) equipment, MBE (Molecular Beam Epitaxy) equipment, HVPE equipment, etc. to grow crystals and produce epitaxial wafers on substrate materials. 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Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor Deposition) equipment, MBE (Molecular Beam Epitaxy) equipment, HVPE equipment, etc. to grow crystals and produce epitaxial wafers on substrate materials. 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https://www.epi-wafers.com/photo/pl97297608-2inch_c_face_fe_doped_si_type_free_standing_gan_single_crystal_substrate_resistivity_10_cm_rf_devices.jpg https://www.epi-wafers.com/photo/pl97297606-2inch_c_face_fe_doped_si_type_free_standing_gan_single_crystal_substrate_resistivity_10_cm_rf_devices.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20240719_669a312024a83.mp4.jpg?1721633200 2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10 cm RF Devices 2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity &gt; 106 cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors (HEMT) wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate. We offer GaN on SiC wafers for RF and Power applications. 2-inch Free-standing U-GaN/SI-GaN Substrates Excellent level (S) Production level(B) Research https://www.epi-wafers.com/vodcdn/videos/encoder/1202407/6bec0d57fe3dd100979d43599fdb2da5/playlist.m3u8 19 2024-07-19T17:25:51+08:00 14 4.8 2inch GaN Single Crystal Substrate Resistivity GaN Single Crystal Substrate https://www.epi-wafers.com/sale-29649461-jdcd06-001-002-3-inch-silicon-wafer-mems-devices-integrated-circuits-dedicated-substrates-for-discre.html 0.8 weekly 2025-10-23 https://www.epi-wafers.com/photo/pl133766827-jdcd06_001_002_3_inch_silicon_wafer_mems_devices_integrated_circuits_dedicated_substrates_for_discrete_devices.jpg https://www.epi-wafers.com/sale-29649482-jdcd06-001-003-4-inch-silicon-wafer-mems-devices-integrated-circuits-dedicated-substrates-for-discre.html 0.8 weekly 2025-10-23 https://www.epi-wafers.com/photo/pl133766966-jdcd06_001_003_4_inch_silicon_wafer_mems_devices_integrated_circuits_dedicated_substrates_for_discrete_devices.jpg https://www.epi-wafers.com/sale-29650308-4-inch-mg-doped-gan-sapphire-substrates-ssp-resistivity-10-cm-led-laser-pin-epitaxial-wafer.html 0.8 weekly 2025-07-17 https://www.epi-wafers.com/photo/pl118154026-4_inch_mg_doped_gan_sapphire_substrates_ssp_resistivity_10_cm_led_laser_pin_epitaxial_wafer.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20240719_669a312024a83.mp4.jpg?1721633200 4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10 cm LED Laser PIN Epitaxial Wafer 4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10 cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better performance at high temperatures. GaN is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material https://www.epi-wafers.com/vodcdn/videos/encoder/1202407/6bec0d57fe3dd100979d43599fdb2da5/playlist.m3u8 19 2024-07-19T17:25:51+08:00 14 4.6 LED Laser GaN Epitaxial Wafer https://www.epi-wafers.com/sale-31297998-4-inch-p-type-mg-doped-gan-on-sapphire-wafer-ssp-resistivity-10-cm-led-laser-pin-epitaxial-wafer.html 0.8 weekly 2025-10-23 https://www.epi-wafers.com/photo/pl118154070-4_inch_p_type_mg_doped_gan_on_sapphire_wafer_ssp_resistivity_10_cm_led_laser_pin_epitaxial_wafer.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20240719_669a312024a83.mp4.jpg?1721633200 4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10 Cm LED Laser PIN Epitaxial Wafer 4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10 cm LED, laser, PIN epitaxial wafer The electrical properties of p-type Mg-doped GaN are investigated through variable-temperature Hall effect measurements. Samples with a range of Mg-doping concentrations were prepared by metalorganic chemical vapor phase deposition. A number of phenomena are observed as the dopant density is increased to the high values typically used in device applications: the effective https://www.epi-wafers.com/vodcdn/videos/encoder/1202407/6bec0d57fe3dd100979d43599fdb2da5/playlist.m3u8 19 2024-07-19T17:25:51+08:00 14 4.1 LED Laser PIN Epitaxial Wafer https://www.epi-wafers.com/sale-30140151-jdcd08-001-006-6inch-c-plane-sapphire-substrate-wafer.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl133766065-jdcd08_001_006_6inch_c_plane_sapphire_substrate_wafer.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs Scale. Nearly all sapphires and sapphire jewelry from online sources and in traditional retail stores are described as natural . 6inch C-plane High Purity Al2O3 substrates https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.7 6inch Sapphire Substrate Wafer https://www.epi-wafers.com/sale-30140179-jdcd08-001-007-8inch-c-plane-sapphire-substrate-wafer.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl133765980-jdcd08_001_007_8inch_c_plane_sapphire_substrate_wafer.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 JDCD08-001-007 8inch C-Plane Sapphire Substrate Wafer JDCD08-001-007 6inch C-Plane Sapphire Substrate Wafer Ruby and sapphires are both made of corundum (aluminium oxide - Al2O3). Corundum is one of the hardest known natural substance after diamond. In addition, because corundum is so hard and resistant to weathering, it can also be found in sedimentary deposits and sedimentary rocks. Sapphire ranks 9 on the Mohs hardness scale. Corundum is stable under normal wearing conditions, which means it's resistant to the effects of heat https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.5 8inch Sapphire Substrate Wafer https://www.epi-wafers.com/sale-29650334-4-inch-n-type-uid-doped-gan-on-sapphire-wafer-ssp-resistivity-0-5-cm-led-laser-pin-epitaxial-wafer.html 0.8 weekly 2025-10-23 https://www.epi-wafers.com/photo/pl118153873-4_inch_n_type_uid_doped_gan_on_sapphire_wafer_ssp_resistivity_0_5_cm_led_laser_pin_epitaxial_wafer.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241118_673b0851c06f7.mp4.jpg?1731928637 4 Inch N-Type UID-Doped GaN On Sapphire Wafer SSP Resistivity 0.5 cm LED, Laser, PIN Epitaxial Wafer 4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity 0.5 cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in https://www.epi-wafers.com/vodcdn/videos/encoder/1202411/45ee2511ab73b51e99dde76c4479f0d6/playlist.m3u8 19 2024-11-18T17:26:37+08:00 6 4.9 PIN GaN On Sapphire Wafer 4 Inch GaN On Sapphire Wafer https://www.epi-wafers.com/sale-29834901-jdwy01-001-002-2-inch-thick-film-1-2-um-ain-on-sapphire-wafer-dsp-xrd-fwhm-of-002-80arcsec-102-650ar.html 0.8 weekly 2025-06-30 https://www.epi-wafers.com/photo/pl133765768-jdwy01_001_002_2_inch_thick_film_1_2_um_ain_on_sapphire_wafer_dsp_xrd_fwhm_of_002_80arcsec_102_650arcsec.jpg https://www.epi-wafers.com/sale-30138112-jdzj01-001-006-sic-seed-crystal-s-grade-6-153-0-5mm.html 0.8 weekly 2025-04-27 https://www.epi-wafers.com/photo/pl133780734-jdzj01_001_006_sic_seed_crystal_s_grade_6_153_0_5mm.jpg https://www.epi-wafers.com/sale-30139388-jdcd07-001-001-4-inch-soi-epitaxial-wafer-for-mems-processing.html 0.8 weekly 2025-10-21 https://www.epi-wafers.com/photo/pl133767027-jdcd07_001_001_4_inch_soi_epitaxial_wafer_for_mems_processing.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing 4-Inch SOI Epitaxial Wafer For MEMS Processing Overview Although silicon crystals may look metallic, they are not entirely metals. Due to the &quot;free electrons&quot; that move easily between atoms, metals are good conductors of electricity, and electricity is the movement of electrons. A pure silicon crystal, on the other hand, is nearly an insulator; allowing very little electricity to pass through it. However, this can be changed through a process called doping. Specification SOI https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.3 MEMS Processing SOI Epitaxial Wafer 4-Inch SOI Epitaxial Wafer SOI Epitaxial Wafer https://www.epi-wafers.com/sale-30139403-jdcd07-001-002-5-inch-soi-epitaxial-wafer-for-mems-processing.html 0.8 weekly 2025-10-21 https://www.epi-wafers.com/photo/pl133766541-jdcd07_001_002_5_inch_soi_epitaxial_wafer_for_mems_processing.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 JDCD07-001-002 5 Inch SOI Epitaxial Wafer For MEMS Processing 5-inch SOI epitaxial wafer for MEMS processing Overview Silicon Wafers (Si Wafer) are thin slices of highly pure crystallized Silicon. Silicon wafers act as a substrate for microelectronic devices and are especially useful in building electronic circuits because of their conductivity and affordability. Silicon comes seventh as the most common element in the entire universe and the second most common element on earth. Some common materials that contain silicon are beach sand, https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.6 5-Inch SOI Epitaxial Wafer SOI Epitaxial Wafer MEMS Processing SOI Epitaxial Wafer https://www.epi-wafers.com/sale-30139445-jdcd07-001-004-7-inch-soi-epitaxial-wafer-for-mems-processing.html 0.8 weekly 2025-10-22 https://www.epi-wafers.com/photo/pl133766841-jdcd07_001_004_7_inch_soi_epitaxial_wafer_for_mems_processing.jpg https://www.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795 JDCD07-001-004 7 Inch SOI Epitaxial Wafer For MEMS Processing 7-inch SOI epitaxial wafer for MEMS processing Overview A silicon wafer is a material essential for manufacturing semiconductors, which are found in all kinds of electronic devices that enrich our lives. Few of us have a chance to encounter an actual silicon wafer in daily life. A silicon wafer is a thin slice of crystal semiconductor, such as a material made up from silicon crystal, which is circular in shape. Specification SOI Diameter 4 5 6 7 Device Layer Dopant https://www.epi-wafers.com/vodcdn/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8 34 2024-10-29T11:46:37+08:00 31 4.8 7 Inch SOI Epitaxial Wafer MEMS Processing SOI Epitaxial Wafer SOI Epitaxial Wafer https://www.epi-wafers.com/sale-30140056-jdcd08-001-002-2-inch-a-plane-sapphire-substrate-wafer.html 0.8 weekly 2025-07-17 https://www.epi-wafers.com/photo/pl133766009-jdcd08_001_002_2_inch_a_plane_sapphire_substrate_wafer.jpg https://www.epi-wafers.com/sale-30140078-jdcd08-001-003-2-inch-m-plane-sapphire-substrate-wafer.html 0.8 weekly 2025-07-01 https://www.epi-wafers.com/photo/pl133766026-jdcd08_001_003_2_inch_m_plane_sapphire_substrate_wafer.jpg https://www.epi-wafers.com/sale-30142545-4-inch-4h-sic-substrate-p-level-si-500-0-25-0-m-mpd-5-cm2-resistivity-1e5-cm-for-power-microwave.html 0.8 weekly 2025-10-22 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https://www.epi-wafers.com/photo/pl108135699-sp_face_11_12_un_doped_n_type_free_standing_gan_single_crystal_substrate_resistivity_0_05_cm_macro_defect_density_0cm.jpg https://www.epi-wafers.com/photo/pl108135697-sp_face_11_12_un_doped_n_type_free_standing_gan_single_crystal_substrate_resistivity_0_05_cm_macro_defect_density_0cm.jpg https://www.epi-wafers.com/photo/pl108135694-sp_face_11_12_un_doped_n_type_free_standing_gan_single_crystal_substrate_resistivity_0_05_cm_macro_defect_density_0cm.jpg https://www.epi-wafers.com/photo/pl108135695-sp_face_11_12_un_doped_n_type_free_standing_gan_single_crystal_substrate_resistivity_0_05_cm_macro_defect_density_0cm.jpg https://www.epi-wafers.com/sale-29256955-350-25-m-thickness-un-doped-n-type-free-standing-gan-single-crystal-substrate-with-ttv-10-m-and-resi.html 0.8 weekly 2025-10-23 https://www.epi-wafers.com/photo/pl108135902-350_25_m_thickness_un_doped_n_type_free_standing_gan_single_crystal_substrate_with_ttv_10_m_and_resistivity_0_1_cm.jpg 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350arcsec,Ra 0.5nm Resistance 1.53E+18 /cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters While silicon-based devices have been able to produce relatively efficient devices, the improved characteristics of gallium nitride give GaN semiconductors the advantage of losing far less energy to heat. 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